Manuals >Nonlinear Device Models Volume 2 >Agilent EEFET3/EEHEMT1 Model
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References

  1   End Resistance Technique

New Method to Measure the Source and Drain Resistance of the GaAs MESFET. Long Yang and Stephen I. Long. IEEE Electron Device Letters Vol. EDL-7, No. 2, February 1986.

  2   Contact Parasitic Resistance and Inductance Method

A New Method for Determining the FET Small-Signal Equivalent Circuit. Gilles Dambrine, Alain Cappy, Frederic Heliodore, and Edouard Playez. IEEE Transactions on Microwave Theory and Techniques, Vol. 36, No. 7, July 1988.

  3   Extraction of Package Parasitic and Intrinsic FET Equivalent Circuit Values

Direct Extraction of GaAs MESFET Intrinsic Element and Parasitic Inductance Values. Eric Arnold, Michael Golio, Monte Miller, and Bill Beckwith. IEEE MTT-S Digest pp. 359-362, 1990.

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