Agilent EEFET3/EEHEMT1 Model
The Agilent 85192B EEFET3/EEHEMT1 model is an empirical analytic model developed for the purpose of fitting measured electrical behavior of GaAsFETs and HEMTs. The model equations were developed concurrently with the parameter extraction techniques to ensure the model contains only parameters that are extractable from measured data. The model can be automated with extraction macros, or the parameters can be extracted individually from measured data.
The model includes the following features:
| • |
An accurate isothermal drain-source current model that fits virtually all processes. |
| • |
Self-heating correction for the drain-source current. |
| • |
A charge model that accurately tracks measured capacitance values. |
| • |
A dispersion model that permits simultaneous fitting of high-frequency conductances and DC characteristics. |
| • |
A breakdown model that describes gate-drain current as a function of both Vgs and Vds. |
| • |
The capability to extrapolate outside the measurement range used to extract the model. |
|
