The Agilent EEBJT2 Model

The Agilent EEBJT2 model is a nonlinear bias-dependent packaged semiconductor device model for silicon BJTs, based on the well-known Gummel-Poon model, with modifications.

The model has been created for automatic parameter extraction from measured data including DC and S-parameter measurements. It can also be used for non-automated extraction or fine tuning of individual parameters. EEBJT2 provides an accurate reproduction of transistor behavior, with DC bias, bias-dependent S-parameters including effects of package parasitics, and true nonlinear harmonic output power. The model is quasi-static, analytical, and isothermal. The model does not scale with area, since parameters are extracted directly from measured data and not from layout considerations.