HiSIM2 and HiSIM_HV Characterization

This chapter describes the measurement and extraction of parameters for the HiSIM2 and the HiSIM_HV models, developed by AdMOS.

You will find the HISIM2 model in the first parts of this chapter, an additional part is dedicated to the HISIM high voltage model. Since this model is based on the HISIM2 model, the HV part of this chapter describes only the differences between those models. The high voltage model uses some additional parameters not present in HISIM2.

The Modeling Packages all use similar Graphic User Interfaces (GUI). Performing the measurement and extraction tasks using one of the Modeling Packages is similar and therefore only needs to be described once. See Chapter 1, "Using the MOS Modeling Packages."

HiSIM is a complete Surface-Potential-Based model to simulate new generation MOSFETs, developed by Hiroshima University. The web address listed in "References" #1 points to the web site of the HiSIM research center.

This short documentation lists the effects of modern MOSFETs using 45nm-technology or smaller, and the SPICE parameters used. It is based on HiSIM 2.4.0, released March, 2007 respective on HiSIM_HV, released June, 2008.