Manuals >Nonlinear Device Models Volume 1 >HiSIM2 and HiSIM_HV Characterization
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Modeled Device Characteristics of the HiSIM2 model

In HISIM 2.4.0, the following device characteristics are included (see "References" #2):

    • Drain Current IDS
     • Short Channel Effect
     • Reverse Short Channel Effect: impurity pile-up and pocket implant
     • Mobility Models:
Universal
 High Field
     • Quantum-Mechanical Effect
     • Gate-Poly Depletion Effect
     • Channel Length Modulation
     • Narrow Channel Effect
     • Temperature Dependency:
Thermal Voltage
 Band Gap
 ni
 Phonon Scattering
 Maximum Velocity
     • Pinch-Off
     • Shallow Trench Isolation:
Threshold Voltage
 Mobility
 Leakage Current
    • Leakage Currents Modeled:
     • IBS
     • IGate
     • IGIDL
    • Capacitances
     • Intrinsic
     • Overlap
     • Lateral-Field-Induced
     • Fringing
    • Junction Diodes:
     • Current
     • Capacitances
    • Higher Order Phenomena
     • Harmonic Distortion
     • Noise Characteristics:
1/f
Thermal
 Induced Gate
 GIDL
     • Small-Signal Analysis
     • Large-Signal Analysis
    • Source/Drain Resistances
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