Manuals >Nonlinear Device Models Volume 2 >The Agilent EEBJT2 Model
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References

  1   Modeling the Bipolar Transistor. Ian Getreu. 1976 Tektronix Inc.

Direct Extraction of GaAs MESFET Intrinsic Element and Parasitic Inductance Values. Eric Arnold, Michael Golio, Monte Miller, and Bill Beckwith. IEEE MTT-S Microwave Symposium Digest (Dallas) 1990.

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