Manuals >Nonlinear Device Models Volume 1 >Curtice GaAs MESFET Characterization
Print version of this Book (PDF file)
prevnext

Simulators

This model is supported only by the HPSPICE simulator in IC-CAP.


Note


Simulators are provided as a courtesy to IC-CAP users; they are not supported by Agilent Technologies.


The default nominal temperature for SPICE3 is 25°C. To force another nominal temperature, set the TNOM variable to the desired value.

The HPSPICE syntax for the Curtice GaAs MESFET element statement is:

JXXXXXXX ND NG NS MNAME

where:

JXXXXXXX

indicates Curtice MESFET device name (any name that begins with J)

ND

indicates drain node number

NG

indicates gate node number

NS

indicates source node number

MNAME

indicates model name

An example of the Curtice GaAs MESFET device model call is:

 J2 1 2 3 CMES 

The HPSPICE syntax for the .MODEL definition is

.MODEL MNAME RCAY TYPE PNAME1=PVAL1 PNAME2=PVAL2 ...

where:

MNAME

indicates model name

RCAY

key word specifying a GaAs MESFET model

TYPE

indicates NJF (N-channel MESFET) or PJF (P-channel MESFET)

PNAME#

indicates Curtice GaAs MESFET parameter name

PVAL#

indicates parameter value of PNAME#

The parameter MODEL in the .MODEL description must be set:

MODEL = 1 indicates Curtice level 1 quadratic model

MODEL = 2 indicates Curtice level 2 cubic model


prevnext