Curtice GaAs MESFET Characterization

This chapter describes the Curtice GaAs MESFET transistor supported by HPSPICE. Descriptions of model setup, instrument connections, and model parameters are included as well as test instrument information. Procedures for extracting AC and DC model parameters from GaAs MESFET transistors using the Curtice GaAs MESFET model are also included. These model parameters describe the operating characteristics of the device under test (DUT), and can be derived from either simulated or direct measurements of the DUT.

The IC-CAP Curtice GaAs modeling module provides setups that can be used for general measurement and model extraction for GaAs technology. Two example files are provided for the Curtice GaAs MESFET transistor:

CGaas1.mdl extracts parameters for the quadratic model

CGaas2.mdl extracts parameters for the cubic model

The IC-CAP system offers the flexibility to modify any measurement or simulation specification.

The model extractions provided are also intended for general GaAs IC processes. If you have another method of extracting specific model parameters, you can do so with the Program function or by writing a function in C and linking it to the function list. Details on the Program transform and writing user-defined C language routines are explained in Chapter 9, "Using Transforms and Functions," in the IC-CAP User's Guide.