UCB GaAs MESFET Characterization

This chapter describes the UCB GaAs MESFET transistor model supported by SPICE. Descriptions of model setup, instrument connections, and model parameters are included as well as test instrument information. Procedures are included for extracting AC and DC model parameters from GaAs MESFET transistors using the UCB GaAs MESFET Model. These model parameters describe the operating characteristics of the device under test (DUT) and can be derived from either simulated or direct measurements of the DUT.

The IC-CAP UCB GaAs MESFET modeling module provides setups that can be used for general measurement and model extraction for GaAs technology. The IC-CAP system offers the flexibility to modify any measurement or simulation specification.

The model extractions provided are also intended for general GaAs IC processes. If you have another method of extracting specific model parameters, you can do so with the Program function or by writing a function in C and linking it to the Function List. Details on the Program transform and writing user-defined C language routines are explained in Chapter 9, "Using Transforms and Functions," in the IC-CAP User's Guide.

The model presented here has been enhanced with the inclusion of the series inductors and the gate resistor. Both of these are implemented as circuit elements of the overall subcircuit. This is an example of one method you might use to customize your own model.