References

1	"BSIM3v3.3 Manual," University of California at Berkeley, July 2005

2	"Characterization System for Submicron CMOS Technologies," JESSI Reports AC41 94-1 through 94-6

3	Peter Klein, "A consistent parameter extraction method for deep submicron MOSFETs," Proc. 27th European Solid-State Device Research Conference, Stuttgart, Germany, 1997

4	"Layout Rules for GHz Probing", Application Note Cascade Microtech

5	F. Sischka, "Deembedding Toolkit," Agilent, GmbH, Böblingen, Germany

6	File: "deemb_short_open.mdl" in IC-CAP examples, Agilent EEsof

7	W. Liu et al., "R.F. MOSFET Modeling Accounting for Distributed Substrate and Channel Resistances with Emphasis on the BSIM3v3 SPICE Model," Proc. IEEE IEDM, 1997

8	C. Enz, "MOS Transistor Modeling for RF IC Design", Silicon RF IC: Modeling and Simulation Workshop, Lausanne, Switzerland, 2000

9	M.Jamal Deen (Ed.), T.A.Fjeldly, "CMOS RF Modeling, Characterization and Applications", Worldscientific, Co-authors: F.Sischka and T.Gneiting

10	W. Liu, "MOSFET Models for SPICE Simulation, including BSIM3v3 and BSIM4", Wiley-Interscience, 2001

How to get the BSIM3v3 manual from University of Berkeley/California:

University of Berkeley/California provides an easy way to get a free copy of the BSIM3v3 manual and the BSIM3v3 source code from their world-wide web home page:

http://www-device.EECS.Berkeley.EDU/~bsim3/

Other useful internet addresses:

Advanced Modeling Solutions:

http://www.admos.de

Agilent EEsof homepage

http://www.agilent.com/find/eesof/

Copyright

BSIM3 has been developed by the Device Research Group of the Department of Electrical Engineering and Computer Science, University of California, Berkeley and is copyrighted by the University of California.