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BSIM3v3 Characterization
This Chapter explains the theoretical background of the BSIM3 model. Using the Modeling Package is described in Chapter 1, "Using the MOS Modeling Packages". This version is based on the BSIM3v3.3.0 model, released by the University of California at Berkeley in July 2005.
What's new inside the BSIM3 Modeling Package:
This section lists the enhancements and changes made to the Modeling Package for each revision since IC-CAP 2002. They are listed in reverse order so that the new version is on top, followed by changes made in former versions.
New features in the BSIM3 Modeling Package, Rev. IC-CAP 2006, spring 2007
The BSIM3 model version has been enhanced to the model version BSIM3v3.3.0.
The GUI has been updated to the same look as the BSIM4 and PSP Modeling Packages.
New features in the BSIM3 Modeling Package, Rev. IC-CAP 2004, spring 2005
1.) BSIM3_DC_CV_Measure
The time to load a new project has been dramatically reduced (also in BSIM3_DC_CV_Extract, BSIM3_RF_Measure, BSIM3_RF_Extract).
List sweeps are now supported.
2.) BSIM3_DC_CV_Extract
The extraction flow has been enhanced to store and retrieve complete extraction scenarios including intermediate results and boundary settings.
The usability of the plot optimizer inside the BSIM3 Package has been enhanced and user configured plot optimizers can be easily integrated into the extraction flow.
3.) BSIM3_RF_Measure
New scheme to define de-embedding structures.
New features in the BSIM3 Modeling Package, Rev. IC-CAP 2004, January 2004
1.) General
The Graphic User Interface from BSIM4 has been adopted. One of the main advantages of this concept is that the measured data can be used by BSIM3 and BSIM4 Modeling Packages for parameter extraction!!!
The BSIM3 Modeling Package can now generate model cards and scalable RF models for the following simulators:
The documentation was totally reworked to account for the common user interface with the BSIM4 Modeling Package and similar upcoming modeling products.
In addition, a detailed description of all the files of the Modeling Package is given. All temperatures in the setup and documentation are now given in [K] instead of [degree C].
Currently, the supported model is BSIM3v3.2.4, released on Dec.21st, 2001.
2.) BSIM3_DC_CV_Measure
The Keithley switching matrix models K707 and K708a are now supported.
The maximum compliance values can now be defined together with the other measurement settings.
Three new functions are implemented to drive the BSIM3_DC_CV_Measure module from a wafer prober control macro. An example for such a control macro can be found in .../examples/model_files/mosfet/BSIM3/examples/waferprober/prober_control.mdl
3.) BSIM3_DC_CV_Extract
A complete new extraction flow is implemented. A certain extraction group (e.g., 'Basic VTH, Mobility') can be invoked several times with different configurations.
Moreover, the flow inside an extraction group can be specified in any desired order.
This gives the highest available flexibility for adopting any parameter extraction to a certain process.
Automatic generation of binned model files is now supported. A new folder Binning in the BSIM3_DC_CV_Extract module allows the specification of the binning areas as well as extended binning. Final circuits are generated for Hspice, Spectre, and ADS.
Generation of HTML files has been enhanced to include a navigation tree through all results. In addition, all measured data at each temperature for each device is compared with the simulated results.
The new IC-CAP feature Plot Optimizer is supported by a user friendly configuration of the devices and setups for a final fine tuning approach.
A new function is implemented to extract multiple projects in batch mode. This can be very useful for statistical modeling, where a large number of model parameter sets must be generated for the same type of devices but from different measured test chips. Please see the macro 'Example_Wafer_Extraction' in the BSIM3_DC_CV_Extract.mdl file.
Parameter extractions have been steadily enhanced due to user's feedback.
4.) BSIM3_RF_Measure
5) BSIM3_RF_Extract
A complete new extraction flow is implemented. Please see 3.) BSIM3_DC_CV_Extract for more details.
The automatic generation of HTML files has been enhanced to include a navigation tree through all results.
6) Documentation
The documentation was totally reworked to account for the common user interface with the BSIM4 Modeling Package and similar upcoming modeling products.
In addition, a detailed description of all files of the Modeling Packages is included.
New features in the BSIM3 Modeling Package, Rev. IC-CAP 2002, March 2003
1.) General
This is an update to the already existing BSIM3v3 Modeling Package in IC-CAP.
The complete user interface and data structure was modified and reworked to have the same style as the existing BSIM4 Modeling Package.
One of the main advantages of this concept is the usage of measured data by the BSIM3 Modeling Package as well as the BSIM4 Modeling Package for parameter extraction
Please note, for compatibility reasons the old BSIM3v3 files can still be accessed in the $ICCAP_ROOT/examples/model_files/mosfet/bsim3v3 directory.
The new style files are located in the directory:
Don't get confused by the missing version information of the "bsim3" term. The new style files don't use the version information any more.
2.) BSIM3_DC_CV_Measure
A feature "Import BSIM3v3" was added to reuse data in the file format of the former BSIM3v3 Modeling Package.
The measured data of the new BSIM3 Modeling Package is now in a format that can be used for the generation of BSIM3 and BSIM4 models
3.) BSIM3_DC_CV_Extract
The existing extraction functions have been ported to the new style user interface.
A new, more user friendly HTML report can be generated, which allows a comparison of measured and simulated data for each device. In addition, the report can be easily included in a word processing program.
4.) BSIM3_RF_Measure
This module measures all data which is necessary for the generation of RF models. The data is compatible with the BSIM4_RF_Measure module and can also be used for the generation of BSIM4 RF models.
5) BSIM3_RF_Extract
A new, fully scalable subcircuit model for the BSIM3 RF behavior was added. The user can now select whether he wants to create a single device model (one model for each test device) or a fully scalable model that covers all available test devices.
6) BSIM3_Tutorial
These are the well known files for learning more about the BSIM3 model itself.
7) Documentation
The Help buttons are still linked to the BSIM4 Online Help. This is OK, because the usage of the BSIM3 Modeling Package and the BSIM4 Modeling Package is identical.
For more information about the BSIM3 model itself, please refer to this chapter.
A reworked version of the documentation will be included in the IC-CAP 2004 release.