SPICE Model Parameters for BSIM4.5.0

The model parameters of the BSIM4 model can be divided into several groups. The main model parameters are used to model the key physical effects in the DC and CV behavior of submicron MOS devices at room temperature. Here they are grouped into subsections related to the physical effects of the MOS transistor. The second group of parameters are the process related parameters. They should only be changed if a detailed knowledge of a certain MOS production process is given. The third group of parameters are the temperature modeling parameters. The following two groups are used to model the AC and noise behavior of the MOS transistor. Finally the last group contains flags to select certain modes of operations and user definable model parameters. For more details about these operation modes, refer to the BSIM4 manual [1].

Main Model Parameters

Table 50 Main Model Parameters 

Parameter	Description	Default Value	Unit
	Process related Parameters
EPSROX	relative gate dielectric constant	3.9 (SiO2)	-
TOXE	Electrical gate equivalent oxide thickness	3E-9	m
TOXP	Physical gate equivalent oxide thickness	TOXE	-
TOXM	Gate oxide thickness at which parameters are extracted	TOXE	-
DTOX	defined as TOXE-TOXP	0.0	m
XJ	Source / Drain junction depth	150E-9	m
GAMMA1	Body-effect coefficient near the surface		V1/2
GAMMA2	Body-effect coefficient in the substrate		V1/2
NGATE	Poly Si-gate doping concentration	0.0	cm-3
NDEP	Channel doping concentration at depletion edge for zero body bias	If NDEP is not given but GAMMA1 is given: If both are not given: NDEP=1E17	cm-3
NSUB	Substrate doping concentration	6E16	cm-3
NSD	Source / Drain doping concentration	1e20	cm-3
XT	Doping depth	1.55E-7	V
VBX	Vbs at which depletion region equals XT		V
RSH	Sheet resistance	0.0
RSHG	Gate electrode sheet resistance	0.1
	Threshold Voltage
VFB	Flatband voltage	-1.0	V
VTH0	Long channel threshold voltage at Vbs = 0	NMOS: 0.7 PMOS: -0.7	V
DELVTO	Zero bias threshold voltage variation	0	V
PHIN	Non-uniform vertical doping effect on surface potential	0.0	V
K1	First-order body effect coefficient	0.5	V0.5
K2	Second-order body effect coefficient	0.0	-
K3	Narrow width coefficient	80.0	-
K3B	Body effect coefficient of K3	0.0	1/V
W0	Narrow width parameter	2.5E-6	m
LPE0	Lateral non-uniform doping parameter at Vbs = 0	1.74e-7	m
LPEB	Lateral non-uniform doping effect on K1	0.0	m
VBM	Maximum applied body bias in VTH0 calculation.	-3.0	V
DVT0	First coefficient of short-channel effect on VTH	2.2	-
DVT1	Second coefficient of short-channel effect on VTH	0.53	-
DVT2	Body-bias coefficient of short-channel effect on VTH	-0.032	1/V
DVTP0	First coefficient of drain-induced Vth shift for long-channel pocket devices	0.0	m
DVTP1	Second coefficient of drain-induced Vth shift for long-channel pocket devices	0.0	V
DVT0W	First coefficient of narrow-width effect on VTH for small channel length	0.0	-
DVT1W	Second coefficient of narrow-width effect on VTH for small channel length	5.3E6	1/m
DVT2W	Body-bias coefficient of narrow-width effect on VTH for small channel length	-0.032	1/V
ETA0	DIBL coefficient in the subthreshold region	0.08	-
ETAB	Body-bias for the subthreshold DIBL effect	-0.07	1/V
DSUB	DIBL coefficient exponent in subthreshold region	DROUT	-
	Mobility
U0	Low-field mobility	NMOS: 670 PMOS: 250	cm2/(Vs)
UA	First-order mobility degradation coefficient due to vertical field	MOBMOD=0 and 1: 1E-9 MOBMOD=2: 1E-15	m/V
UB	Second-order mobility degradation coefficient	1E-19	(m/V)2
UC	Coefficient of the body-bias effect of mobility degradation	MOBMOD=1: -0.0465 MOBMOD=0 and 2: 0.0465E-9	1/V m/V2
UD	Mobility coulomb scattering coefficient	1E14	1/m2
UP	Mobility channel length coefficient	0	1/m2
LP	Mobility channel length exponential coefficient	1E-8	m
EU	Exponent for mobility degradation of MOBMOD = 2	NMOS: 1.67 PMOS: 1.0	-
	Drain current
VSAT	Saturation velocity	8.0E4	m/s
A0	Bulk charge effect coefficient	1.0	-
A1	First non-saturation effect factor	0.0	1/V
A2	Second non-saturation effect factor	1.0	-
AGS	Coefficient of Vgs dependence of bulk charge effect	0.0	1/V
B0	Bulk charge effect coeff. for channel width	0.0	m
B1	Bulk charge effect width offset	0.0	m
KETA	Body-bias coefficient of the bulk charge effect	-0.047	1/V
	Subthreshold region
VOFF	Offset voltage in subthreshold region for large W and L	-0.08	V
VOFFL	Channel length dependence of VOFF	0.0	mV
MINV	Vgsteff fitting parameter for moderate inversion condition	0.0	-
NFACTOR	Subthreshold swing factor	1.0	-
CIT	Interface trap capacitance	0.0	F/m2
CDSC	Drain-Source to channel coupling capacitance	2.4E-4	F/m2
CDSCB	Body-bias coefficient of CDSC	0.0	F/Vm2
CDSCD	Drain-bias coefficient of CDSC	0.0	F/Vm2
	Drain-Source resistance
RDSW	Zero bias LDD resistance per unit width for RDSMOD = 0	200	(µm)WR
RDSWMIN	LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD = 0	0.0	(µm)WR
RDW	Zero bias LDD drain resistance per unit width for RDSMOD = 1	100	(µm)WR
RDWMIN	Zero bias LDD drain resistance per unit width at high Vgs and zero Vbs for RDSMOD = 1	0.0	(µm)WR
RSW	Zero bias LDD source resistance per unit width for RDSMOD = 1	100	(µm)WR
RSWMIN	Zero bias LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD = 1	0.0	(µm)WR
WR	Channel width dependence parameter of LDD resistance	1.0	-
PRWB	Body bias coefficient of LDD resistance	0.0	V-0.5
PRWG	Gate bias dependence of LDD resistance	1.0	1/V
NRS	Number of source diffusion squares	1.0	-
NRD	Number of drain diffusion squares	1.0	-
	Channel geometry
WINT	Channel width offset parameter	0.0	m
WL	Coeff. of length dependence for width offset	0.0	mWLN
WLN	Power of length dependence for width offset	1.0	-
WW	Coeff. of width dependence for width offset	0.0	mWWN
WWN	Power of width dependence for width offset	1.0	-
WWL	Coeff. of length and width cross term for width offset	0.0	mWLN+WWN
LINT	Channel length offset parameter	0.0	m
LL	Coeff. of length dependence for length offset	0.0	mLLN
LLN	Power of length dependence for length offset	1.0	-
LW	Coeff. of width dependence for length offset	0.0	mLWN
LWN	Power of width dependence for length offset	1.0	-
LWL	Coeff. of length and width cross term for length offset	0.0	mLWN+LLN
LLC	Coefficient of length dependence for CV channel length offset	LL	-
LWC	Coefficient of width dependence for CV channel length offset	LW	-
LWLC	Coefficient of length and width cross term dependence for CV channel length offset	LWL	-
WLC	Coefficient of length dependence for CV channel width offset	WL	-
WWC	Coefficient of width dependence for CV channel width offset	WW	-
WWLC	Coefficient of length and width cross term dependence for CV channel width offset	WWL	-
LMIN	Minimum channel length	0.0	m
LMAX	Maximum channel length	1.0	m
WMIN	Minimum channel width	0.0	m
WMAX	Maximum channel width	1.0	m
DWG	Coefficient of gate bias dependence of Weff	0.0	m/V
DWB	Coefficient of substrate bias dependence of Weff	0.0	m/V0.5
	Output resistance
PCLM	Channel length modulation parameter	1.3	-
PDIBL1	First output resistance DIBL effect parameter	0.39	-
PDIBL2	Second output resistance DIBL effect parameter	8.6m	-
PDIBLB	Body bias coefficient of output resistance DIBL effect	0.0	1/V
DROUT	Channel-length dependence coefficient of the DIBL effect on output resistance	0.56	-
PSCBE1	First substrate current induced body-effect parameter	4.24E8	V/m
PSCBE2	Second substrate current induced body-effect coefficient	1.0E-5	m/V
PVAG	Gate-bias dependence of Early voltage	0.0	-
FPROUT	Effect of pocket implant on Rout degradation	0.0	V/m0.5
PDITS	Impact of drain-induced Vth shift on Rout	0.0	V-1
PDITSL	Channel-length dependence of drain-induced Vth shift on Rout	0.0	m-1
PDITSD	Vds dependence of drain-induced Vth shift on Rout	0.0	V-1
ALPHA0	First impact ionization parameter	0.0	Am/V
ALPHA1	Length dependent substrate current parameter	0.0	A/V
BETA0	First VDS dependent parameter of impact ionization current	0	1/V
BETA1	Second VDS dependent parameter of impact ionization current	0
BETA2	Third VDS dependent parameter of impact ionization current	0.1	V
VDSATII0	Nominal drain saturation voltage at threshold for impact ionization current	0.9	V
TII	Temperature dependent parameter for impact ionization current	0
LII	Channel length dependent parameter at threshold for impact ionization current	0
ESATII	Saturation channel electric field for impact ionization current	1E7	1/m
SII0	First VGS dependent parameter for impact ionization current	0.5	1/V
SII1	Second VGS dependent parameter for impact ionization current	0.1	1/V
SII2	Third VGS dependent parameter for impact ionization current	0
SIID	VDS dependent parameter of drain saturation voltage for impact ionization current	0	1/V
	Unified Current Saturation
LAMBDA	Velocity overshoot coefficient If not given or , velocity overshoot will be turned off!	2.0E-5	m/s
VTL	Thermal velocity If not given or , source end thermal velocity limit will be turned off!	2.0E-5	m/s
LC	Velocity back scattering coefficient (~5E-9m at room temperature)	0.0	m
XN	Second velocity back scattering coefficient	3.0
	Gate-Induced Drain Leakage model
AGIDL	Pre-exponential coefficient for GIDL	0.0	mho (1/Ohm)
BGIDL	Exponential coefficient for GIDL	2.3e9	V/m
CGIDL	Parameter for body-bias effect on GIDL	0.5	V³
EGIDL	Fitting parameter for band bending for GIDL	0.8	V
	Gate Dielectric Tunneling Current
AIGBACC	Parameter for Igb in accumulation	0.43
BIGBACC	Parameter for Igb in accumulation	0.054
CIGBACC	Parameter for Igb in accumulation	0.075	1/V
NIGBACC	Parameter for Igb in accumulation	1.0	-
AIGBINV	Parameter for Igb in inversion	0.35
BIGBINV	Parameter for Igb in inversion	0.03
CIGBINV	Parameter for Igb in inversion	0.006	1/V
EIGBINV	Parameter for Igb in inversion	1.1	V
NIGBINV	Parameter for Igb in inversion	3.0	-
AIGC	Parameter for Igcs and Igcd	NMOS: 0.054 PMOS: 0.31
BIGC	Parameter for Igcs and Igcd	NMOS: 0.054 PMOS: 0.024
CIGC	Parameter for Igcs and Igcd	NMOS: 0.075 PMOS: 0.03	V
AIGSD	Parameter for Igs and Igd	NMOS: 0.43 PMOS: 0.31
BIGSD	Parameter for Igs and Igd	NMOS: 0.054 PMOS: 0.024
CIGSD	Parameter for Igs and Igd	NMOS: 0.075 PMOS: 0.03	V
DLCIG	Source/Drain overlap length for Igs and Igd	LINT	-
NIGC	Parameter for Igcs, Igcd, Igs and Igd	1.0	-
POXEDGE	Factor for gate oxide thickness in source/drain overlap regions	1.0	-
PIGCD	Vgs dependence of Igcs and Igcd	1.0	-
NTOX	Exponent for the gate oxide ratio	1.0	-
TOXREF	Nominal gate oxide thickness for gate direct tunneling model	3E-9	m
VFBSDOFF	Flatband Voltage Offset Parameter	0	V
	Diode Characteristics
IJTHSREV IJTHDREV	(Source) Limiting current in reverse bias region (Drain)	IJTHSREV =0.1 IJTHDREV =IJTHSREV	A
IJTHSFWD IJTHDFWD	(Source) Limiting current in forward bias region (Drain)	IJTHSFWD =0.1 IJTHDFWD =IJTHSFWD	A
XJBVS XJBVD	(Source) Fitting parameter for diode breakdown (Drain)	XJBVS=1.0 XJBVD =XJBVS	-
BVS BVD	(Source) Breakdown voltage (Drain)	BVS=10.0 BVD=BVS	V
JSS JSD	(Source) Bottom junction reverse saturation current density (Drain)	JSS=1.0e-4 JSD=JSS	A/m²
JSWS JSWD	Isolation-edge sidewall reverse saturation current density	JSWS =0.0 JSWD =JSWS	A/m
JSWGS JSWGD	Gate-edge sidewall reverse saturation current density	JSWGS=0.0 JSWGD=JSWGS	A/m
CJS CJD	Bottom junction capacitance per unit area at zero bias	CJS=5.0e-4 CJD=CJS	F/m²
MJS MJD	Bottom junction capacitance grating coefficient	MJS=0.5 MJD=MJS	-
MJSWS MJSWD	Isolation-edge sidewall junction capacitance grading coefficient	MJSWS =0.33 MJSWD =MJSWS	-
CJSWS CJSWD	Isolation-edge sidewall junction capacitance per unit area	CJSWS= 5.0e-10 CJSWD=CJSWS	F/m
CJSWGS CJSWGD	Gate-edge sidewall junction capacitance per unit length	CJSWGS =CJSWS CJSWGD =CJSWS	-
MJSWGS MJSWGD	Gate-edge sidewall junction capacitance grading coefficient	MJSWGS=MJSWS MJSWGD=MJSWS	-
PBS	Source bottom junction built-in potential	PBS=1.0	V
PBD	Drain bottom junction built-in potential	PBD=PBS	V
PBSWS	Isolation-edge sidewall junction built-in potential of source junction	PBSWS =1.0	V
PBSWD	Isolation-edge sidewall junction built-in potential of drain junction	PBSWD=PBSWS	V
PBSWGS	Gate-edge sidewall junction built-in potential of source junction	PBSWGS =PBSWS	V
PBSWGD	Gate-edge sidewall junction built-in potential of drain junction	PBSWGD=PBSWS	V
	Asymmetric Source/Drain Junction Diode Model
JTSS JTSD	Bottom trap-assisted saturation current density (Source side / Drain side)	0.0 =JTSS	A/m
JTSSWS JTSSWD	STI sidewall trap-assisted saturation current density (Source side / Drain side)	0.0 JTSSWS	A/m
JTSSWGS JTSSWGD	Gate sidewall trap-assisted saturation current density (Source side / Drain side)	0.0 JTSSWGS	A/m
NJTS	Non-ideality factor for JTSS, JTSD	20
NJTSSW	Non-ideality factor for JTSSWS, JTSSWD	20
NJTSSWG	Non-ideality factor for JTSSWGS, JTSSWGD	20
XTSS XTSD	Power dependence of JTSS, JTSD on temperature (Source side / Drain side)	0.02
XTSSWS XTSSWD	Power dependence of JTSSWS, JTSSWD on temperature (Source side / Drain side)	0.02
XTSSWGS XTSSWGD	Power dependence of JTSSWGS, JTSSWGD on temperature (Source side / Drain side)	0.02
VTSS VTSD	Bottom trap-assisted voltage dependent parameter (Source side / Drain side)	10 =VTSS	V
VTSSWS VTSSWD	STI sidewall trap-assisted voltage dependent parameter (Source side / Drain side)	10 VTSSWS	V
VTSSWGS VTSSWGD	STI sidewall trap-assisted voltage dependent parameter (Source side / Drain side)	10 VTSSWGS	V
TNJTS	Temperature coefficient for NJTS	0
TNJTSSW	Temperature coefficient for NJTSSW	0
TNJTSSWG	Temperature coefficient for NJTSSWG	0
	Capacitance
XPART	Charge partitioning parameter	0.0	-
CGSO	Non LDD region gate-source overlap capacitance per unit W	calculated, see Overlap Capacitance Model	F/m
CGDO	Non LDD region gate-drain overlap capacitance per unit W	calculated, see Overlap Capacitance Model	F/m
CGBO	Gate-bulk overlap capacitance per unit L	0.0	F/m
CGSL	Light doped gate-source region overlap capacitance	0.0	F/m
CGDL	Light doped gate-drain region overlap capacitance	0.0	F/m
CKAPPAS	Coefficient of bias-dependent overlap capacitance on source side	0.6	V
CKAPPAD	Coefficient of bias-dependent overlap capacitance on drain side	CKAPPAS	V
CF	Fringing field capacitance		F/m
CLC	Constant term for the short channel model	0.1E-7	m
CLE	Exponential term for the short channel model	0.6	-
DLC	Length offset fitting parameter for CV model	LINT	m
DWC	Width offset fitting parameter for CV model	WINT	m
VFBCV	Flatband voltage parameter for CAPMOD = 0	-1.0	V
NOFF	CV parameter in Vgsteff,CV for weak to strong inversion	1.0	-
VOFFCV	CV parameter in Vgsteff,CV for weak to strong inversion	0.0	V
ACDE	Exponential coefficient for charge thickness in accumulation and depletion regions in CAPMOD=2	1.0	m/V
MOIN	Coefficient for the gate-bias dependent surface potential	15.0	-

Temperature Modeling Parameters

Table 51 Temperature Modeling Parameters 

Parameter	Description	Default Value	Unit
TNOM	Parameter extraction temperature	27	°C
UTE	Mobility temperature coefficient	-1.5	-
KT1	Threshold voltage temperature coefficient	-0.11	V
KT1L	Channel length dependence of KT1	0.0	Vm
KT2	Threshold voltage temperature coefficient	0.022	-
UA1	Temperature coefficient for UA	1E-9	m/V
UB1	Temperature coefficient for UB	-1E-18	(m/V)2
UC1	Temperature coefficient for UC	MOBMOD=1: 0.056 MOBMOD=0 and 2: 0.056E-9	1/V m/V2
UD1	Temperature coefficient for UD	0	(1/m)²
PRT	Temperature coefficient for RDSW	0.0	m
AT	Saturation velocity temperature coefficient	3.3E4	m/s
NJS	Emission coefficient for Source junction	1.0	-
NJD	Emission coefficient for Drain junction	NJS	-
XTIS	Junction current temperature exponent coefficient of source body junction	3.0	-
XTID	Junction current temperature exponent coefficient of drain body junction	XTIS	-
TPB	Temperature coefficient for PB	0.0	V/K
TPBSW	Temperature coefficient for PBSW	0.0	V/K
TPBSWG	Temperature coefficient for PBSWG	0.0	V/K
TCJ	Temperature coefficient for CJ	0.0	1/K
TCJSW	Temperature coefficient for CJSW	0.0	1/K
TCJSWG	Temperature coefficient for CJSWG	0.0	1/K
TVOFF	Temperature coefficient of VOFF	0	1/K
TVFBSDOFF	Temperature coefficient of VFBSDOFF	0	1/K

Flicker Noise Model Parameters

Table 52 Flicker Noise Model Parameters

Parameter	Description	Default Value	Unit
NOIA	Flicker noise parameter A	NMOS: 6.25e41 PMOS: 6.188e40	(eV)-1 s1-EFm-3
NOIB	Flicker noise parameter B	NMOS: 3.125e26 PMOS: 1.5e25	(eV)-1 s1-EFm-1
NOIC	Flicker noise parameter C	8.75	(eV)-1 s1-EFm
EM	Saturation field	4.1e7	V/m
AF	Flicker noise exponent	1.0	-
EF	Flicker noise frequency exponent	1.0	-
KF	Flicker noise coefficient	0.0	A2-EF s1-EFF
LINTNOI	Length Reduction Parameter Offset	0	m
NTNOI	Noise factor for short-channel devices for TNOIMOD=0 only	1.0	-
TNOIA	Coefficient of channel-length dependence of total channel thermal noise	1.5	-
TNOIB	Channel-length dependence parameter for channel thermal noise partitioning	3.5	-
	Holistic Thermal Noise
RNOIA	Thermal noise coefficient	0.577
RNOIB	Thermal noise coefficient	0.37

Stress Effect Modeling

Table 53 Stress Effect Model Parameters 

Parameter	Description	Default Value	Unit
SA	Instance parameter: Distance between OD edge to poly Si from one side, see Figure 60 If not given or , stress effect will be turned off!	0.0	m
SB	Instance parameter: Distance between OD edge to poly Si from the other side, see Figure 60 If not given or , stress effect will be turned off!	0.0	m
SD	Instance parameter: Distance between neighboring fingers, see Figure 60 For NF > 1: if not given or , stress effect will be turned off!	0.0	m
SAREF	Reference distance between OD edge to poly Si from one side	1E-6	m
SBREF	Reference distance between OD edge to poly Si from the other side	1E-6	m
WLOD	Width parameter for stress effect	0.0	m
KU0	stress effect mobility degradation/enhancement coefficient	0.0	1/m
KVSAT	Stress effect saturation velocity degradation/enhancement parameter	0.0
TKU0	KU0 temperature coefficient	0.0
LKU0	KU0 length dependence	0.0
WKU0	KU0 width dependence	0.0
PKU0	KU0 cross-term dependence	0.0
LLODKU0	Length parameter for U0 stress effect (>0)	0.0
WLODKU0	width parameter for U0 stress effect (>0)	0.0
KVTH0	stress effect threshold shift parameter	0.0
LKVTH0	KVTH0 length dependence	0.0
WKVTH0	KVTH0 width dependence	0.0
PKVTH0	KVTH0 cross-term dependence	0.0
LLODVTH	VTH stress effect length parameter (>0)	0.0
WLODVTH	VTH stress effect width parameter (>0)	0.0
STK2	Shift factor for K2 with changing VTH0	0.0
LODK2	K2 shift modification factor for stress effect (>0)	1.0
STETA0	Shift factor for ETA0, related to change of VTH0	0.0
LODETA0	ETA0 shift modification factor for stress effect (>0)	1.0

Well-Proximity Modeling

Table 54 Well-Proximity Effect Model Parameters

Parameter	Description	Default Value	Unit
SCA	Integral of the first distribution function for scattered well dopant	0
SCB	Integral of the second distribution function for scattered well dopant	0
SCC	Integral of the third distribution function for scattered well dopant	0
SC	Distance to a single well edge	0	m
WEB	Coefficient for SCB	0
WEC	Coefficient for SCC	0
KVTH0WE	Threshold shift factor for well proximity effect	0
K2WE	K2 shift factor for well proximity effect	0
KU0WE	Mobility degradation factor for well proximity effect	0
SCREF	Reference distance to calculate SCA, SCB, and SCC	1E-6	m

High-Speed / RF Model Parameters

Table 55 High-Speed/RF Model Parameters 

Parameter	Description	Default Value	Unit
XRCRG1	Parameter for distributed channel resistance effect for both intrinsic input resistance and charge-deficit NQS models	12.0	-
XRCRG2	Parameter to account for the excess channel diffusion resistance for both intrinsic input resistance and charge-deficit NQS models	1.0	-
RBPB	Resistance connected between bNodePrime and bNode	50.0	Ohm
RBPD	Resistance connected between bNodePrime and dbNode	50.0	Ohm
RBPS	Resistance connected between bNodePrime and sbNode	50.0	Ohm
RBDB	Resistance connected between dbNode and bNode	50.0	Ohm
RBSB	Resistance connected between sbNode and bNode	50.0	Ohm
GBMIN	Conductance in parallel with each of the five substrate resistances to avoid potential numerical instability due to unreasonably too large a substrate resistance	1.0e-12	mho
RBPS0	Scaling prefactor for RBPS	50.0	Ohm
RBPSL	Length scaling parameter for RBPS	0.0	Ohm
RBPSW	Width scaling parameter for RBPS	0.0	Ohm
RBPSNF	Number of fingers scaling parameter for RBPS	0.0	Ohm
RBPD0	Scaling prefactor for RBPD	50.0	Ohm
RBPDL	Length scaling parameter for RBPD	0.0
RBPDW	Width scaling parameter for RBPD	0.0
RBPDNF	Number of fingers scaling parameter for RBPD	0.0
RBPBX0	Scaling prefactor for RBPBX	100.0	Ohm
RBPBXL	Length scaling parameter for RBPBX	0
RBPBXW	Width scaling parameter for RBPBX	0
RBPBXNF	Number of fingers scaling parameter for RBPBX	0
RBPBY0	Scaling prefactor for RBPBY	100.0	0hm
RBPBYL	Length scaling parameter for RBPBY	0
RBPBYW	Width scaling parameter for RBPBY	0
RBPBYNF	Number of fingers scaling parameter for RBPBY	0
RBSBX0	Scaling prefactor for RBSBX	100.0	0hm
RBSBY0	Scaling prefactor for RBSBY	100.0	0hm
RBDBX0	Scaling prefactor for RBDBX	100.0	0hm
RBDBY0	Scaling prefactor for RBDBY	100.0	0hm
RBSDBXL	Length scaling parameter for RBSBX and RBDBX	0
RBSDBXW	Width scaling parameter for RBSBX and RBDBX	0
RBSDBXNF	Number of fingers scaling parameter for RBSBX and RBDBX	0
RBSDBYL	Length scaling parameter for RBSBY and RBDBY	0
RBSDBYW	Width scaling parameter for RBSBY and RBDBY	0
RBSDBYNF	Number of fingers scaling parameter for RBSBY and RBDBY	0

Layout-Dependent Parasitics Model Parameters

Table 56 Layout-Dependent Parasitics Model Parameters

Parameter	Description	Default Value	Unit
DMCG	Distance from S/D contact center to the gate edge	0.0	m
DMCI	Distance from S/D contact center to the isolation edge in the channel length direction	DMCG	-
DMDG	Same as DMCG but for merged device only	0.0	m
DMCGT	DMCG of test structures	0.0	m
NF	Number of device fingers	1.0	-
DWJ	Offset of the S/D junction width (in CV model)	DWC	-
MIN	Whether to minimize the number of drain or source diffusions for even number fingered devices	0.0	-
XGW	Distance from the gate contact to the channel edge	0.0	m
XGL	Offset of the gate length due to variations in patterning	0.0	m
XL	Channel length offset due to mask/etch effect	0.0	m
XW	Channel width offset due to mask/etch effect	0.0	m
NGCON	Number of gate contacts	1.0	-