Manuals >Nonlinear Device Models Volume 1 >BSIM4 Characterization
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References

  1   BSIM4.5.0 Manual, University of California at Berkeley, Copyright © 2004 The Regents of the University of California. See the web site of the device research group at UCB. You can download the manual from the Internet, using the following Web address:
http://www-device.eecs.berkeley.edu/~bsim3/bsim4_get.htmll

  2   "Characterization System for Submicron CMOS Technologies," JESSI Reports AC41 94-1 through 94-6

  3   C. Enz, "MOS Transistor Modeling for RF IC Design", Silicon RF IC: Modeling and Simulation Workshop, Lausanne 2000

  4   T. Gneiting, "BSIM4, BSIM3v3 and BSIMSOI RF MOS Modeling", RF Modeling and Measurement Workshop, European Microwave Week, Paris 2000

  5   William Liu, "Mosfet Models for Spice Simulation: Including BSIM3v3 and BSIM4", John Wiley & Sons, January 2001

  6   M. J. Deen (Ed.), T.A.Fjeldly, "CMOS RF Modeling, Characterization and Applications", Worldscientific, Co-authors: F.Sischka and T.Gneiting

  7   X. Xi, M. Dunga, A. M. Niknejad, C. Hu, "Description of BSIM450 Model Enhancements", June 24, 2005, to be found at the following Web address: http://www-device.eecs.berkeley.edu/~bsim3/BSIM4/BSIM450/doc/BSIM450_Enhancement.pdf

Acknowledgements

The BSIM4 model was developed by the UC Berkeley BSIM Device Research Group of the Department of Electrical Engineering and Computer Science, University of California, Berkeley and is copyrighted by the University of California.


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