SPICE Model Parameters

The following tables list the model parameters used in the HISIM MOS model together with their default values and the possible parameter range.

Table 4 Instance Parameters

Parameter Name	Description	Unit
L	gate length - Lgate	m
W	gate width - Wgate	m
AD	drain junction area	m2
AS	source junction area	m2
PD	drain junction perimeter	m
PS	source junction perimeter	m
NRS	number of source squares	-
NRD	number of drain squares	-
XGW	distance from the gate contact to the channel edge	m
XGL	offset of the gate length	m
NF	number of gate fingers	-
M	multiplication factor	-
NGCON	number of gate contacts	-
RBPB	substrate resistance network
RBPD	substrate resistance network
RBPS	substrate resistance network
RBDB	substrate resistance network
RBSB	substrate resistance network
SA	diffusion length between gate and STI	m
SB	diffusion length between gate and STI	m
SD	diffusion length between gates	m
TEMP	device temperature	°C
DTEMP	device temperature change	°C
NSUBCDFM	substrate impurity concentration	m-3
SUBLD1	substrate current induced in Ldrift	A
SUBLD2	substrate current induced in Ldrift	A

Table 5 Basic Device Parameters  

Parameter Name	Default	Range min	Range max	Description	Unit
TOX	30n			physical oxide thickness	m
XL	0			difference between real and drawn gate length	m
XW	0			difference between real and drawn gate width	m
XLD	0	0	50n	gate-overlap length	m
XWD	0	-10n	100n	gate-overlap width	m
TPOLY	2.00E-07			height of the gate poly-Si for fringing capacitance	m
LL	0			coefficient of gate length modification	-
LLD	0			coefficient of gate length modification	m
LLN	0			coefficient of gate length modification	-
WL	0			coefficient of gate width modification	-
WLD	0			coefficient of gate width modification	m
WLN	0			coefficient of gate width modification	-
NSUBC	0			substrate-impurity concentration	cm-3
NSUBP	1.00E17	1E16	1E19	maximum pocket concentration	cm-3
LP	15n	0	300n	pocket penetration length	m
NPEXT	5.00E+17	1E16	1E18	maximum concentration of pocket tail	cm-3
LPEXT	1.00E-50	1E-50	10E-6	extension length of pocket tail	m
VFBC	-1	-1.2	-0.8	flat-band voltage	V
VBI	1.1	1.0	1.2	built-in potential	V
KAPPA	3.9			dielectric constant for gate dielectric	-
EG0	1.1785	1.0	1.3	bandgap	eV
BGTMP1	90.25	50	100	temperature dependence of bandgap	eV·K-1
BGTMP2	0.1	-1	1	temperature dependence of bandgap	eV·K-2
TNOM	27			temperature selected as a nominal temperature value	degC

Table 6 Saturation Velocity Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
VMAX	10E6	1E6	20E6	saturation velocity	cm·s-1
VOVER	0.3	0	1.0	velocity overshoot effect	cm
VOVERP	0.3	0	2	Leff dependence of velocity overshoot	-
VTMP	0	-2.0	1.0	temperature dependence of the saturation velocity	cm·s-1

Table 7 Quantum Mechanical Effect Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
QME1	0	0	300n	Vgs dependence of quantum mechanical effect	m·V-2
QME2	1.0	0	3.0	Vgs dependence of quantum mechanical effect	V
QME3	0	0	800p	minimum Tox modification	m

Table 8 Poly-Silicon Gate Depletion Effect Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
PGD1	0	0	50m	strength of poly-depletion effect	V
PGD2	1.0	0	1.5	threshold voltage of poly-depletion effect	V
PGD3	0.8	0	1.0	Vds dependence of poly-depletion effect	-
PGD4	0	0	3.0	Lgate dependence of poly-depletion effect	-

Table 9 Short Channel Effect Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
PARL2	10n	0	50n	depletion width of channel/contact junction	m
SC1	1.0	0	200	magnitude of short-channel effect	-
SC2	1.0	0	50	Vds dependence of short-channel effect	V-1
SC3	0	0	1m	Vbs dependence of short-channel effect	m·V-1
SCP1	1.0	0	50	magnitude of short-channel effect due to pocket	-
SCP2	0.1	0	50	Vds dependence of short-channel due to pocket	V-1
SCP3	0	0	1m	Vbs dependence of short-channel effect due to pocket	m·V-1
SCP21	0	0	5.0	short-channel-effect modification for small Vds	V
SCP22	0	0	50m	short-channel-effect modification for small Vds	V4
BS1	0	0	100m	body-coefficient modification by impurity profile	V2
BS2	0.9	0.5	1.0	body-coefficient modification by impurity profile	V

Table 10 Mobility Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
MUECB0	1E3	100	100E3	coulomb scattering	cm2·V-1·s-1
MUECB1	100	15	10E3	coulomb scattering	cm2·V-1·s-1
MUEPH0	0.3	0.25	0.3	phonon scattering	-
MUEPH1	25E3(NMOS) 9E3(PMOS)	2E3	30E3	phonon scattering	cm2·V-1·s-1
MUETMP	1.5	0.5	2.0	temperature dependence of phonon scattering	-
MUEPHL	0			length dependence of phonon mobility reduction	-
MUEPLP	1.0			length dependence of phonon mobility reduction	-
MUESR0	2.0	1.8	2.2	surface-roughness scattering	-
MUESR1	1E15	1E14	1E16	surface-roughness scattering	cm2·V-1·s-1
MUESRL	0			length dependence of surface roughness mobility reduction	-
MUESLP	1.0			length dependence of surface roughness mobility reduction	-
NDEP	1.0	0	1.0	depletion charge contribution on effective-electric field	-
NDEPL	0			modification of QB contribution for short-channel case	-
NDEPLP	1.0			modification of QB contribution for short-channel case	-
NINV	0.5	0	1.0	inversion charge contribution on effective-electric field	-
BB	2.0			high-field-mobility degradation	-

Table 11 Channel-Length Modulation Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
CLM1	0.05	0.01	1.0	hardness coefficient of channel/contact junction	-
CLM2	2.0	1.0	2.0	coefficient for QB contribution	-
CLM3	1.0	1.0	5.0	coefficient for QI contribution	-
CLM4	1.0	1.0	5.0	used in former versions	-
CLM5	1.0	0	5.0	effect of pocket implantation	-
CLM6	0	0	5.0	effect of pocket implantation	-

Table 12 Narrow Channel Effect Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
WFC	0	-5.0E-15	1E-6	threshold voltage change due to capacitance change	F·cm-2·m-1
WVTH0	0			threshold voltage shift	-
NSUBP0	0			modification of pocket concentration for narrow width	cm-3
NSUBWP	1.0			modification of pocket concentration for narrow width	-
MUEPHW	0			phonon related mobility reduction	-
MUEPWP	1.0			phonon related mobility reduction	-
MUESRW	0			change of surface roughness related mobility	-
MUESWP	1.0			change of surface roughness related mobility	-
VTHSTI	0			threshold voltage shift due to STI	-
VDSTI	0			Vds dependence of STI subthreshold	-
SCSTI1	0			the same effect as SC1 but at STI edge	-
SCSTI2	0			the same effect as SC2 but at STI edge	-
NSTI	5E17	1E16	1E19	substrate-impurity concentration at the STI edge	cm-3
WSTI	0			width of the high-field region at STI edge	m
WSTIL	0			channel-length dependence of WSTI	m
WSTILP	0			channel-length dependence of WSTI	m
WSTIW	0			channel-width dependence of WSTI	m
WSTIWP	0			channel-width dependence of WSTI	m
WL1	0			threshold voltage shift of STI leakage due to small size effect	-
WL1P	1.0			threshold voltage shift of STI leakage due to small size effect	-
NSUBPSTI1	0			pocket concentration change due to diffusion-region length between gate and STI	m
NSUBPSTI2	0			pocket concentration change due to diffusion-region length between gate and STI	m
NSUBPSTI3	1.0			pocket concentration change due to diffusion-region length between gate and STI	m
MUESTI1	0			mobility change due to diffusion-region length between gate and STI	-
MUESTI2	0			mobility change due to diffusion-region length between gate and STI	-
MUESTI3	1.0			mobility change due to diffusion-region length between gate and STI	-
SAREF	1.0E-6			reference length of diffusion between gate and STI	m
SBREF	1.0E-6			reference length of diffusion between gate and STI	m

Table 13 Small Size Effect Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
WL2	0			threshold voltage shift due to small size effect	-
WL2P	1.0			threshold voltage shift due to small size effect	-
MUEPHS	0			mobility modification due to small size	-
MUEPSP	1.0			mobility modification due to small size	-
VOVERS	0			modification of maximum velocity due to small size	-
VOVERSP	0			modification of maximum velocity due to small size	-

Table 14 Substrate Current Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
SUB1	50E-3			substrate current coefficient of magnitude	V-1
SUB1L	2.5E-3			Lgate dependence SUB1	m
SUB1LP	1.0			Lgate dependence SUB1	-
SUB2	100			substrate current coefficient of exponential term	V
SUB2L	2E-6	0	1.0	Lgate dependence of SUB2	m
SVDS	0.8			substrate current dependence on Vds	-
SLG	3E-8			substrate current dependence on Lgate	m
SLGL	0			substrate current dependence on Lgate	m
SLGLP	1.0			substrate current dependence on Lgate	-
SVBS	0.5			substrate current dependence on Vbs	-
SVBSL	0			Lgate dependence of SVBS	m
SVBSLP	1.0			Lgate dependence of SVBS	-
SVGS	0.8			substrate current dependence on Vgs	-
SVGSL	0			Lgate dependence of SVGS	m
SVGSLP	1.0			Lgate dependence of SVGS	-
SVGSW	0			Wgate dependence of SVGS	m
SVGSWP	1.0			Wgate dependence of SVGS	-

Table 15 Subthreshold Swing Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
PTHROU	0	0	50m	correction for subthreshold swing	-

Table 16 Impact-ionization induced Bulk Potential Change Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
IBPC1	0	0	1.0E12	impact-ionization induced bulk potential change	Ohm
IBPC2	0	0	1.0E12	impact-ionization induced bulk potential change	V-1

Table 17 Gate Leakage Current Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
GLEAK1	50			gate to channel current coefficient	A·V-3/2·C-1
GLEAK2	10E6			gate to channel current coefficient	V-1/2·m-1
GLEAK3	60E-3			gate to channel current coefficient	-
GLEAK4	4.0			gate to channel current coefficient	m-1
GLEAK5	7.5E3			gate to channel current coefficient short channel correction	V·m-1
GLEAK6	250E-3			gate to channel current coefficient Vds dependence correction	V
GLEAK7	1E-6			gate to channel current coefficient gate length and width dependence correction	m2
EGIG	0.0			temperature dependence of gate leakage	V
IGTEMP2	0			temperature dependence of gate leakage	V·K
IGTEMP3	0			temperature dependence of gate leakage	V·K2
GLKSD1	1f			gate to source/drain current coefficient	A·m·V-2
GLKSD2	5E6			gate to source/drain current coefficient	V-1·m-1
GLKSD3	-5E6			gate to source/drain current coefficient	m-1
GLKB1	5E-16			gate to bulk current coefficient	A·V-2
GLKB2	1.0			gate to bulk current coefficient	m·V-1
GLKB3	1.0			flat-bans shift for gate to bulk current	m·V-1
GLPART1	0.5	0.0	1.0	partitioning ratio of gate leakage current	-
FN1	50			first coefficient of Fowler-Nordheim-current contribution	V-1.5·m2
FN2	170E-6			second coefficient of Fowler-Nordheim-current contribution	V-0.5·m-1
FN3	0			coefficient of Fowler-Nordheim-current contribution	V
FVBS	12E-3			Vbs dependence of Fowler-Nordheim current	-

Table 18 GIDL Current Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
GIDL1	2.0			magnitude of GIDL	A·V-3/2·C-1·m
GIDL2	3E7			field dependence of GIDL	V-2·m-1·F-3/2
GIDL3	0.9			Vds dependence of GIDL	-
GIDL4	0			threshold of Vds dependence	V
GIDL5	0.2			correction of high-field contribution	-

Table 19 Conservation of the Symmetry at Vds=0 for Short-Channel MOSFETs Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
VZADD0	10m			symmetry conservation coefficient	V
PZADD0	5m			symmetry conservation coefficient	V

Table 20 Smoothing coefficient between linear and saturation region Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
DDLTMAX	10	0.0	20.0	smoothing coefficient for Vds	V
DDLTSLP	0	0.0	20.0	Lgate dependence of smoothing coefficient	V
DDLTICT	10	-3.0	20.0	Lgate dependence of smoothing coefficient	V

Table 21 Source/Bulk and Drain/Bulk Diodes Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
JS0	0.5E-6			saturation current density	A·m-2
JS0SW	0			sidewall saturation current density	A·m-1
NJ	1.0			emission coefficient	-
NJSW	1.0			sidewall emission coefficient	-
XTI	2.0			temperature coefficient for forward current densities	-
XTI2	0			temperature coefficient for reverse current densities	-
DIVX	0			reverse current coefficient	V-1
CTEMP	0			temperature coefficient of reverse currents	-
CISB	0			reverse biased saturation current	-
CISBK	0			reverse biased saturation current at low temperature	A
CVB	0			bias dependence coefficient of CISB	-
CVBK	0			bias dependence coefficient of CISB at low temperature	-
CJ	5E-4			bottom junction capacitance per unit area at zero bias	F·m-2
CJSW	5E-10			source/drain sidewall junction cap. grading coefficient per unit length at zero bias	F·m-1
CJSWG	5E-10			source/drain sidewall junction capacitance per unit length at zero bias	F·m-1
MJ	0.5			bottom junction capacitance grading coefficient	-
MJSW	0.33			source/drain sidewall junction capacitance grading coefficient	-
MJSWG	0.33			source/drain gate sidewall junction capacitance grading coefficient	-
PB	1.0			bottom junction build-in potential	V
PBSW	1.0			source/drain sidewall junction build-in potential	V
PBSWG	1.0			source/drain gate sidewall junction build-in potential	V
VDIFFJ	0.6E-3			diode threshold voltage between source/drain and substrate	V

Table 22 1/f Noise Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
NFALP	1E-19			contribution of the mobility fluctuation	cm·s
NFTRP	10G			ratio of trap density to attenuation coefficient	V-1·cm-2
CIT	0			capacitance caused by the interface trapped carriers	F·cm-2

Table 23 DFM Support Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
MPHDFM	-0.3	-3	3	mobility dependence on NSUBC due to phonon mobility	-

Table 24 Non-Quasi-Static Model Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
DLY1	100E-12			coefficient for delay due to diffusion of carriers	s
DLY2	0.7			coefficient for delay due to conduction of carriers	-
DLY3	0.8E-6			coefficient for RC delay of bulk carriers	Ohm

Table 25 Capacitance Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
XQY	0	0	50n	distance drain junction to maximum electric field point	m
XQY1	0	0	50n	Vbs dependence of Qy	m
XQY2	0	0	50n	Lgate dependence of Qy	m
LOVER	30n			overlap length	m
NOVER	0			impurity concentration in overlap region	cm-3
VFBOVER	-0.5			flat-band voltage in overlap region	V
OVSLP	2.1E-7			coefficient for overlap capacitance	-
OVMAG	0.6			coefficient for overlap capacitance	V
CGSO	0	0	100n	gate-to-source overlap capacitance	F·m-1
CGDO	0	0	100n	gate-to-drain overlap capacitance	F·m-1
CGBO	0	0	100n	gate-to-bulk overlap capacitance	F·m-1

Table 26 Parasitic Resistances Parameters 

Parameter Name	Default	Range min	Range max	Description	Unit
RS	0	0	10m	source-contact resistance in LDD region	Ohm·m
RD	0	0	10m	drain-contact resistance in LDD region	Ohm·m
RSH	0	0	1m	source/drain sheet resistance	Ohm/square
RSHG	0	0	100	gate sheet resistance	Ohm/square
GBMIN	1E-12			substrate resistance network	-
RBPB	50			substrate resistance network	Ohm
RBPD	50			substrate resistance network	Ohm
RBPS	50			substrate resistance network	Ohm
RBDB	50			substrate resistance network	Ohm
RBSB	50			substrate resistance network	Ohm