References

1	Principles Of Nonlinear Active Device Modeling For Circuit Simulation. David E. Root and Brian Hughes, Hewlett-Packard Company. Procedings 32nd ARFTG Conference, Tempe, AZ, pp. 3-26, 1988.

2	Automated Data Acquisition System For FET Measurement and Its Application. Sigi Fan, David E. Root, and Jeff Meyer, Hewlett-Packard Company. Proceedings 38th IEEE MTT ARFTG Conference, San Diego, CA, December 1991.

3	Measurement-Based Active Device Modeling For Circuit Simulation, European Microwave Conference, 1993.

4	A Measurement-Based FET Model Improves CAE Accuracy. David E. Root, Hewlett-Packard Company. Microwave Journal, September 1991.

5	Measurement-Based Large Signal Diode Model, Automated Data Acquisition System. MTT Digest, 1993.

6	Analysis and Exact Solutions of Relaxation-Time Differential Equations Describing Non Quasi-Static Large Signal FET Models. David E. Root, Hewlett-Packard Company. European Microwave Conference. Cannes, France, 1994.

7	Experimental Evaluation of Large-Signal Modeling Assumptions Based On Vector Analysis of Bias-Dependent S-Parameter Data from MESFETs and HEMTs. David E. Root and Sigi Fan, Hewlett-Packard. IEEE MTT-S Digest, 1992.

8	Measurement-Based Active Device Modeling For Circuit Simulation. David E. Root, Hewlett-Packard Company. European Microwave Conference, Madrid, Spain, 1993.

9	Technology-Independent Large-Signal FET Models: A Measurement-Based Approach to Active Device Modeling. David E. Root, Sigi Fan, and Jeff Meyer, Hewlett-Packard Company. 15th ARMMS Conference, 1991.

10	Accurate Large-Signal GaAs MESFET Modeling for a Power MMIC Amplifier Design. J. M. Dortu and J. E. Muller, Siemens AG, Munich, Germany. Microwave Journal, April 1993.

11

The Extraction Of Terminal Charges From Two-Dimensional Device Simulations Of MOS Transistors. E. J. Predeergast and P. Lloyd, AT&T Bell Laboratories, Allentown, PA. COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Vol. 6, No. 2, 107-114. Boole Press Limited, 1987.

12	Direct Extraction Of GaAs Mesfet Intrinsic Element And Parasitic Inductance Values. Eric Arnold, Michael Golio, Monte Miller, and Bill Beckwith, Motorola Inc., Strategic Electronic Division, Chandler, AZ. IEEE MTT-S Digest, 1990.

13	A New Method for Determining the FET Small-Signal Equivalent Circuit. Gilles Dambrine, Alain Cappy, Frederic Heliodore, and Edouard Playez. IEEE Transactions on Microwave Theory and Techniques, Vol. 36, No. 7, July 1998.

(Additional references are listed in the bibliography at the end of some of these publications.)