Manuals >Nonlinear Device Models Volume 1 >Curtice GaAs MESFET Characterization Print version of this Book (PDF file) |
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Test InstrumentsThe HP 4141, Agilent 4142, or HP 4145 can be used to derive DC model parameters from measured DC voltage and current characteristics. The Agilent 8510, Agilent 8753, or HP 8702 (with an HP 41xx instrument) can be used to derive capacitance and inductance model parameters from S-parameter measurements. Instrument-to-Device ConnectionsWhen the device is installed in a test fixture, verify the identity of device nodes by checking the inputs and outputs for the appropriate DUTs. The following table is a cross reference of the connections between the terminals of a typical MESFET device and various measurement units. These connections and measurement units are defined in CGaas1.mdl and CGaas2.mdl example files. Input and output tables in the various setups use abbreviations D (drain), G (gate), and S (source) for the MESFET device nodes. These nodes are defined in the Circuit folder. Measurement units (abbreviated as follows) are defined in Hardware Setup.
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