Manuals >Nonlinear Device Models Volume 1 >UCB MOS Level 2 and 3 Characterization Print version of this Book (PDF file) |
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Test InstrumentsThe HP 4141, HP/Agilent 4142, or HP 4145 can be used to derive DC model parameters from measured DC voltage and current characteristics.The HP 4271, HP 4275, HP 4280, HP/Agilent 4284, or HP 4194 can be used to derive capacitance model parameters from measured capacitance characteristics at the device junctions. Instrument-to-Device ConnectionsWhen the device is installed in a test fixture, verify the correct connection of device nodes by checking the inputs and outputs for the DUTs. The following table is a cross-reference of connections between the terminals of a typical MOSFET device and various measurement units. These connections and measurement units are defined in the model file. Input and output tables in the various setups use abbreviations D (drain), G (gate), S (source), and B (bulk [substrate]) for the MOSFET device nodes. These nodes are defined in the Circuit folder. Measurement units (abbreviated as follows) are defined in Hardware Setup.
Notes: DUT is the name of the DUT as specified in DUT-Setup. Example: DUT large has the DC measurement unit SMU1 connected to its drain, SMU2 connected to its gate, SMU3 connected to its source, and SMU4 connected to its bulk |
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