Manuals >Nonlinear Device Models Volume 1 >UCB MOS Level 2 and 3 Characterization
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Test Instruments

The HP 4141, HP/Agilent 4142, or HP 4145 can be used to derive DC model parameters from measured DC voltage and current characteristics.The HP 4271, HP 4275, HP 4280, HP/Agilent 4284, or HP 4194 can be used to derive capacitance model parameters from measured capacitance characteristics at the device junctions.

Instrument-to-Device Connections

When the device is installed in a test fixture, verify the correct connection of device nodes by checking the inputs and outputs for the DUTs. The following table is a cross-reference of connections between the terminals of a typical MOSFET device and various measurement units. These connections and measurement units are defined in the model file.

Input and output tables in the various setups use abbreviations D (drain), G (gate), S (source), and B (bulk [substrate]) for the MOSFET device nodes. These nodes are defined in the Circuit folder.

Measurement units (abbreviated as follows) are defined in Hardware Setup.

SMU# for DC measurement units
VS# for voltage source units
VM# for voltage monitor units
CM for capacitance measurement units
NWA for network analyzer ports units

Table 78 Instrument-to-Device Connections 
DUT
Drain
Gate
Source
Bulk
Comments
large
SMU1
SMU2
SMU3
SMU4


narrow
SMU1
SMU2
SMU3
SMU4


short
SMU1
SMU2
SMU3
SMU4


cbd1
CM(L)
open
open
CM(H)
calibrate for parasitic capacitance
cbd2
CM(L)
open
open
CM(H)
calibrate for parasitic capacitance

Notes:
DUT is the name of the DUT as specified in DUT-Setup. Example: DUT large has the DC measurement unit SMU1 connected to its drain, SMU2 connected to its gate, SMU3 connected to its source, and SMU4 connected to its bulk

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