



Threshold Voltage

VTHO

Ideal threshold voltage

0.7/0.7

V

K1

Firstorder body effect coefficient

0.5

V^{0.5}

K2

Secondorder body effect coefficient

0.5



K3

Narrow width coefficient

80.0



K3B

Body effect coefficient of K3

0.0

1/V

W0

Narrow width parameter

2.5E6

m

NLX

Lateral nonuniform doping coefficient

1.74E7

m

VBM

Maximum applied body bias in VTH calculation

5.0

V

DVT0

First coefficient of shortchannel effect on VTH

2.2



DVT1

Second coefficient of shortchannel effect on VTH

0.53



DVT2

Bodybias coefficient of shortchannel effect on VTH

0.032

1/V

DVT0W

First coefficient of narrowchannel effect on VTH

2.2



DVT1W

Second coefficient of narrowchannel effect on VTH

5.3E6



DVT2W

Bodybias coefficient of narrowchannel effect on VTH

0.032

1/V

ETA0

DIBL coefficient in the subthreshold region

0.08



ETAB

Bodybias for the subthreshold DIBL effect

0.07

1/V

DSUB

DIBL coefficient in subthreshold region

DROUT



Mobility

U0

Mobility

670 / 250

cm^{2}/(Vs)

UA

Firstorder mobility degradation coefficient

2.25E9

m/V

UB

Secondorder mobility degradation coefficient

5.87E19

(m/V)^{2}

UC

Bodyeffect of mobility degradation

4.65E11

(m/V)^{2}

Drain current

VSAT

Saturation velocity

8.0E6

cm/s

A0

Bulk charge effect coefficient

1.0



A1

First non saturation factor

0/0.23

1/V

A2

Second non saturation factor

1.0/0.08



AGS

Gatebias coefficient of Abulk

0.0

1/V

B0

Bulk charge effect coeff. for channel width

0.0

m

B1

Bulk charge effect width offset

0.0

m

KETA

Bodybias coefficient of the bulk charge effect.

0.047

1/V

Subthreshold region

VOFF

Offset voltage in the subthreshold region

0.11

V

NFACTOR

Subthreshold swing factor

1.0



CIT

Interface trap density

0

F/m^{2}

CDSC

DrainSource to channel coupling capacitance

2.4E4

F/m^{2}

CDSCB

Bodybias coefficient of CDSC

0

F/Vm^{2}

CDSCD

Drainbias coefficient of CDSC

0

F/Vm^{2}

Drainsource resistance

RDSW

Parasitic resistance per unit width

0

m

WR

Width offset from Weff for RDS calculation

1.0



PRWB

Body effect coefficient of RDSW

0

V^{0.5}

PRWG

Gate bias effect coefficient of RDSW

0

1/V

Channel geometry

WINT

Channel width reduction on one side

0

m

WL

Coeff. of length dependence for width offset

0

m

WLN

Power of length dependence for width offset

1



WW

Coeff. of width dependence for width offset

0

m

WWN

Power of width dependence for width offset

1



WWL

Coeff. of length and width cross term for width offset

0

m

LINT

Channel length reduction on one side

0

m

LL

Coeff. of length dependence for length offset

0

m

LLN

Power of length dependence for length offset

1



LW

Coeff. of width dependence for length offset

0

m

LWN

Power of width dependence for length offset

1



LWL

Coeff. of length and width cross term for length offset

0

m

DWG

Coefficient of Weff's gate dependence

0

m/V

DWB

Coefficient of Weff's substrate dependence

0

m/V^{0.5}

Output resistance

PCLM

Channel length modulation coefficient

1.3



PDIBLC1

First output resistance DIBL effect

0.39



PDIBLC2

Second output resistance DIBL effect

0.0086



PDIBLCB

Body effect coefficient of output resistance DIBL effect

0

1/V

DROUT

L dependent coefficient of the DIBL effect in output resistance

0.56


PSCBE1

First substrate current bodyeffect coefficient

4.24E8

V/m

PSCBE2

Second substrate current bodyeffect coefficient

1.0E5

m/V

PVAG

Gate dependence of Early voltage

0



ALPHA0

The first parameter of impact ionization

0

m/V

ALPHA1

Length dependent substrate current parameter

0

1/V

BETA0

The second parameter of impact ionization

30


Diode characteristic

JS

Source drain junction saturation density

1E4

A/m^{2}

JSSW

Side wall saturation current density

0

A/m

NJ

Emission coefficient of junction

1



IJTH

Diode limiting current

0.1

A

Capacitance

CJ

Source/drain bottom junction capacitance per unit area

5.0E4

F/m^{2}

CJSW

Source/drain side junction capacitance per unit length

5.0E10

F/m

CJSWG

Source/drain gate side junction capacitance per unit length

CJSW

F/m

MJ

Bottom junction capacitance grading coefficient

0.5



MJSW

Source/drain side junction capacitance grading coefficient

0.33



MJSWG

Source/drain gate side junction cap. grading coefficient

MJSW



PB

Bottom junction builtin potential

1.0

V

PBSW

Source/drain side junction builtin potential

1.0

V

PBSWG

Source/drain gate side junction builtin potential

PBSW

V

CGSO

Gatesource overlap capacitance per unit W

XJ*COX/2

F/m

CGDO

Gatedrain overlap capacitance per unit W

XJ*COX/2

F/m

GGBO

Gatebulk overlap capacitance per unit W

0.0

F/m

CGSL

Light doped sourcegate region overlap capacitance

0.0

F/m

CGDL

Light doped draingate region overlap capacitance

0.0

F/m

CKAPPA

Coefficient for lightly doped region overlap

0.6

F/m

CF

Fringing field capacitance



F/m

CLC

Constant term for the short channel model

0.1E6

m

CLE

Exponential term for the short channel model

0.6


DLC

Length offset fitting parameter from CV

LINT

m

DWC

Width offset fitting parameter from CV

WINT

m

NOFF

Subthreshold swing factor for CV model

1



VOFFCV

Offset voltage for CV model

0

V
