SPICE Model Parameters

The model parameters of the BSIM3v3 model can be divided into several groups. The main model parameters are used to model the key physical effects in the DC and CV behavior of submicron MOS devices at room temperature. Here they are grouped into subsections related to the physical effects of the MOS transistor. The second group are the process related parameters. They should only be changed if a detailed knowledge of a certain MOS production process is given. The third group of parameters are the temperature modeling parameters. The following two groups are used to model the AC and noise behavior of the MOS transistor. Finally the last group contains flags to select certain modes of operations and user definable model parameters. For more details about these operation modes refer to the BSIM3v3 manual [1].

Main Model Parameters

Table 58 Main Model Parameters 

Parameter	Description	Default Value (NMOS/PMOS)	Unit
Threshold Voltage
VTHO	Ideal threshold voltage	0.7/-0.7	V
K1	First-order body effect coefficient	0.5	V0.5
K2	Second-order body effect coefficient	0.5	-
K3	Narrow width coefficient	80.0	-
K3B	Body effect coefficient of K3	0.0	1/V
W0	Narrow width parameter	2.5E-6	m
NLX	Lateral non-uniform doping coefficient	1.74E-7	m
VBM	Maximum applied body bias in VTH calculation	-5.0	V
DVT0	First coefficient of short-channel effect on VTH	2.2	-
DVT1	Second coefficient of short-channel effect on VTH	0.53	-
DVT2	Body-bias coefficient of short-channel effect on VTH	-0.032	1/V
DVT0W	First coefficient of narrow-channel effect on VTH	2.2	-
DVT1W	Second coefficient of narrow-channel effect on VTH	5.3E6	-
DVT2W	Body-bias coefficient of narrow-channel effect on VTH	-0.032	1/V
ETA0	DIBL coefficient in the subthreshold region	0.08	-
ETAB	Body-bias for the subthreshold DIBL effect	-0.07	1/V
DSUB	DIBL coefficient in subthreshold region	DROUT	-
Mobility
U0	Mobility	670 / 250	cm2/(Vs)
UA	First-order mobility degradation coefficient	2.25E-9	m/V
UB	Second-order mobility degradation coefficient	5.87E-19	(m/V)2
UC	Body-effect of mobility degradation	-4.65E-11	(m/V)2
Drain current
VSAT	Saturation velocity	8.0E6	cm/s
A0	Bulk charge effect coefficient	1.0	-
A1	First non saturation factor	0/0.23	1/V
A2	Second non saturation factor	1.0/0.08	-
AGS	Gate-bias coefficient of Abulk	0.0	1/V
B0	Bulk charge effect coeff. for channel width	0.0	m
B1	Bulk charge effect width offset	0.0	m
KETA	Body-bias coefficient of the bulk charge effect.	-0.047	1/V
Subthreshold region
VOFF	Offset voltage in the subthreshold region	-0.11	V
NFACTOR	Subthreshold swing factor	1.0	-
CIT	Interface trap density	0	F/m2
CDSC	Drain-Source to channel coupling capacitance	2.4E-4	F/m2
CDSCB	Body-bias coefficient of CDSC	0	F/Vm2
CDSCD	Drain-bias coefficient of CDSC	0	F/Vm2
Drain-source resistance
RDSW	Parasitic resistance per unit width	0	m
WR	Width offset from Weff for RDS calculation	1.0	-
PRWB	Body effect coefficient of RDSW	0	V-0.5
PRWG	Gate bias effect coefficient of RDSW	0	1/V
Channel geometry
WINT	Channel width reduction on one side	0	m
WL	Coeff. of length dependence for width offset	0	m
WLN	Power of length dependence for width offset	1	-
WW	Coeff. of width dependence for width offset	0	m
WWN	Power of width dependence for width offset	1	-
WWL	Coeff. of length and width cross term for width offset	0	m
LINT	Channel length reduction on one side	0	m
LL	Coeff. of length dependence for length offset	0	m
LLN	Power of length dependence for length offset	1	-
LW	Coeff. of width dependence for length offset	0	m
LWN	Power of width dependence for length offset	1	-
LWL	Coeff. of length and width cross term for length offset	0	m
DWG	Coefficient of Weff's gate dependence	0	m/V
DWB	Coefficient of Weff's substrate dependence	0	m/V0.5
Output resistance
PCLM	Channel length modulation coefficient	1.3	-
PDIBLC1	First output resistance DIBL effect	0.39	-
PDIBLC2	Second output resistance DIBL effect	0.0086	-
PDIBLCB	Body effect coefficient of output resistance DIBL effect	0	1/V
DROUT	L dependent coefficient of the DIBL effect in output resistance	0.56
PSCBE1	First substrate current body-effect coefficient	4.24E8	V/m
PSCBE2	Second substrate current body-effect coefficient	1.0E-5	m/V
PVAG	Gate dependence of Early voltage	0	-
ALPHA0	The first parameter of impact ionization	0	m/V
ALPHA1	Length dependent substrate current parameter	0	1/V
BETA0	The second parameter of impact ionization	30
Diode characteristic
JS	Source drain junction saturation density	1E-4	A/m2
JSSW	Side wall saturation current density	0	A/m
NJ	Emission coefficient of junction	1	-
IJTH	Diode limiting current	0.1	A
Capacitance
CJ	Source/drain bottom junction capacitance per unit area	5.0E-4	F/m2
CJSW	Source/drain side junction capacitance per unit length	5.0E-10	F/m
CJSWG	Source/drain gate side junction capacitance per unit length	CJSW	F/m
MJ	Bottom junction capacitance grading coefficient	0.5	-
MJSW	Source/drain side junction capacitance grading coefficient	0.33	-
MJSWG	Source/drain gate side junction cap. grading coefficient	MJSW	-
PB	Bottom junction built-in potential	1.0	V
PBSW	Source/drain side junction built-in potential	1.0	V
PBSWG	Source/drain gate side junction built-in potential	PBSW	V
CGSO	Gate-source overlap capacitance per unit W	XJ*COX/2	F/m
CGDO	Gate-drain overlap capacitance per unit W	XJ*COX/2	F/m
GGBO	Gate-bulk overlap capacitance per unit W	0.0	F/m
CGSL	Light doped source-gate region overlap capacitance	0.0	F/m
CGDL	Light doped drain-gate region overlap capacitance	0.0	F/m
CKAPPA	Coefficient for lightly doped region overlap	0.6	F/m
CF	Fringing field capacitance	-	F/m
CLC	Constant term for the short channel model	0.1E-6	m
CLE	Exponential term for the short channel model	0.6
DLC	Length offset fitting parameter from C-V	LINT	m
DWC	Width offset fitting parameter from C-V	WINT	m
NOFF	Subthreshold swing factor for CV model	1	-
VOFFCV	Offset voltage for CV model	0	V

Process Related Parameters

Table 59 Process Related Parameters 

Parameter	Description	Default Value	Unit
TOXM	Gate oxide thickness at which parameters are extracted	15e-9	m
TOX	Gate oxide thickness	15E-9	m
XJ	Junction depth	150E-9	m
NCH	Doping concentration near interface	1.7E17	1/cm³
NSUB	Doping concentration away from interface	6E16	1/cm³
NGATE	Poly gate doping concentration	0	1/cm3
VFB	Flat-band voltage	-1.0	V
gamma1	Body-effect near interface
gamma2	Body-effect far from interface
XT	Doping depth	1.55E-7	V
RSH	Source/Drain Sheet resistance	0

Temperature Modeling Parameters

Table 60 Temperature Modeling Parameters

Parameter	Description	Default Value	Unit
UTE	Mobility temperature coefficient	-1.5	-
KT1	Threshold voltage temperature coefficient	-0.11	V
KT1L	Channel length dependence of KT1	0.0	Vm
KT2	Threshold voltage temperature coefficient	0.022	-
UA1	Temperature coefficient for UA	4.31E-19	m/V
UB1	Temperature coefficient for UB	-7.61E-18	(m/V)2
UC1	Temperature coefficient for UC	-0.056	m/V2
PRT	Temperature coefficient for RDSW	0.0	m
AT	Saturation velocity temperature coefficient	3.3E4	m/s
XTI	Junction current temperature exponent coefficient	3.0	-
TPB	Temperature coefficient for PB	0	V/K
TPBSW	Temperature coefficient for PBSW	0	V/K
TPBSWG	Temperature coefficient for PBSWG	0	V/K
TCJ	Temperature coefficient for CJ	0	1/K
TCJSW	Temperature coefficient for CJSW	0	1/K
TCJSWG	Temperature coefficient for CJSWG	0	1/K

Flicker Noise Model Parameters

Table 61 Flicker Noise Model Parameters 

Parameter	Description	Default Value (NMOS/PMOS)	Unit
NOIA	Noise parameter A	1E20 / 9.9E18	-
NOIB	Noise parameter B	5E4 / 2.4E3	-
NOIC	Noise parameter C	-1.4E-12 / 1.4E12	-
EM	Saturation field	4.1E7	V/m
AF	Frequency exponent	1	-
EF	Flicker exponent	1	-
KF	Flicker noise parameter	0	-
LINTNOI	Length reduction parameter offset	0	m

Non-Quasi-Static Model Parameters

Table 62 Non-Quasi-Static Model Parameter

Parameter	Description	Default Value	Unit
ELM	Elmore constant of the channel	5	-

Model Selection Flags

Table 63 Model Selection Flags 

Parameter	Value	Type of Model
LEVEL	8	BSIM3v3 model selector (in UCB SPICE)
MOBMOD	1	Mobility model
	2
	3
CAPMOD	0	Capacitance model
	1
	2
	3
NQSMOD	0	Non quasi static model
	1
ACNQSMOD	0	introduced from BSIM4
	1
NOIMOD	1	Noise model
	2
	3
	4
	5	new thermal noise / SPICE2 flicker noise
	6	new thermal noise / BSIM3 flicker noise

User Definable Parameters

Table 64 User Definable Parameters

Parameter	Description	Default Value	Unit
XPART	Charge partitioning coefficient	0	-
DELTA	Parameter for smoothness of effective Vds calculation	0.01	-

Additional Parameters needed for accurate RF modeling

Table 65 RF Parameters for the RF subcircuit 

Parameter	Description	Default Value	Unit
RSHB	bulk sheet resistance	25
DGG	distance between gate stripes	2E-6	m
DSCB	distance source to bulk contact	2E-6	m
DDCB	distance drain to bulk contact	2E-6	m
RBDB	resistance between bulk connection point and drain	100
RBSB	resistance between bulk connection point and source	100
RBPD	resistance between the region below the channel and the drain region	100
RBPS	resistance between the region below the channel and the source region	100