Manuals >Nonlinear Device Models Volume 1 >BSIM4 Characterization
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Key Features of the BSIM4 Modeling Package

    • The graphical user interface in Agilent`s IC-CAP enables the quick setup of tests and measurements followed by automatic parameter extraction routines.
    • The data management concept allows a powerful and flexible handling of measurement data using an open and easy data base concept.
    • The powerful extraction procedures can be easily adapted to different CMOS processes. They support all possible configurations of the BSIM4 model.
    • Quality assurance procedures are checking every step in the modeling flow from measurements to the final export of the SPICE model parameter set.
    • The fully automatic generation of HTML reports is included to enable web publishing of a modeling project.
    • The modeling package supports SPICE3e2 and major commercial simulator formats such as HSPICE, Spectre, or Agilent's ADS.

The Modeling Package Supports Measurements on

    • Single finger (normal) transistors
    • Parasitic diodes
    • Capacitances:
     • Oxide and Overlap
     • Bulk-Drain and Source-Drain junction
     • Intrinsic
    • RF multifinger transistors

The Modeling Package Supports Extractions for

    • Basic transistor behavior
    • Parasitic diodes
    • Capacitances
    • RF behavior (S-parameters)
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