Basic Effects Modeled in BSIM4
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Short and narrow channel effects on threshold voltage |
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Non-uniform doping effects |
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Mobility reduction due to vertical field |
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Carrier velocity saturation |
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Drain induced barrier lowering (DIBL) |
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Channel length modulation (CLM) |
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Substrate current induced body effect (SCBE) |
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Parasitic resistance effects |
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Quantum mechanic charge thickness model |
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Enhanced temperature mode (TempMod=2) |
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Enhanced mobility model using Leff dependency |
Enhanced drain current model
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VTH model for pocket/retrograde technologies |
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New predictive mobility model |
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Gate induced drain leakage (GIDL) |
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Internal/external bias-dependent drain source resistance |
RF and high-speed model
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Intrinsic input resistance (Rgate) model |
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Non-Quasi-Static (NQS) model |
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Holistic and noise-partition thermal noise model |
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Substrate resistance network |
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Calculation of layout-dependent parasitic elements |
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Asymmetrical source/drain junction diode model |
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I-V and breakdown model |
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Gate dielectric tunneling current model |
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