Parameters for the PSP model

This section lists the parameters used for the PSP model together with a description of their meaning as well as the default, minimum, and maximum values. The instance and switch parameters are listed first, followed by the regular parameters.

Table 31 Instance parameters for local and global model

Parameter at Local level	Parameter at Global level	Description	Unit	Default	Min	Max
	L	Drawn channel length	m	1.0E-6	1E-9	-
	W	Drawn channel width	m	1.0E-6	1E-9	-
	SA	Distance between OD-edge and poly at source side	m	0	-	-
	SB	Distance between OD-edge and poly at drain side	m	0	-	-
ABSOURCE	ABSOURCE	Source junction area	m²	1.0E-12	0
LSSOURCE	LSSOURCE	STI-edge part of source junction perimeter	m	1.0E-06	0	-
LGSOURCE	LGSOURCE	Gate-edge part of source junction perimeter	m	1.0E-06	0	-
ABDRAIN	ABDRAIN	Drain junction area	m²	1.0E-12	0	-
LSDRAIN	LSDRAIN	STI-edge part of drain junction perimeter	m	1.0E-6	0	-
LGDRAIN	LGDRAIN	Gate-edge part of drain junction perimeter	m	1.0E-6	0	-
AS	AS	Source junction area	m²	1E-12	0	-
AD	AD	Drain junction area	m²	1E-12	0	-
PS	PS	Source STI-edge perimeter	m	1E-6	0	-
PD	PD	Drain STI-edge perimeter	m	1E-6	0	-
MULT	MULT	Number of devices in parallel		1
JW		Junction Width	m	10E-6	0

If SA = SB = 0, the stress equations are not computed!

Table 32 Switching Parameter SWJUNCAP for Capacitance Calculation (global and local level)

		SOURCE			DRAIN
SWJUNCAP	AB	LS	LG	AB	LS	LG
0	0	0	0	0	0	0
1	ABSOURCE	LSSOURCE	LGSOURCE	ABDRAIN	LSDRAIN	LGDRAIN
2	AS	PS	0	AD	PD	0
3	AS	PS-WE	WE	AD	PD-WE	WE
AB = junction area LS = STI-edge part of the junction perimeter LG = gate-edge part of the junction perimeter

Since PSP uses a hierarchical approach, parameters are used inside the local, the global, or both models. For this reason, the following tables have a column for parameters of the local model and one column for parameters of the global model. Under the column for the local model, only parameters used inside the local model are listed. The global model column lists global model parameters only. If you are extracting parameters just for a local model (e.g., for one geometry exactly), only the parameters in the first column are needed for this task. But if you are extracting a global model, the parameters inside both of the columns are relevant. This is because you can use a local model separately, but a global model always needs local models.

The table is organized in a way that you can see the relations of the parameters. For example, you will find a parameter called VFB (flat band voltage) in the local level column under the process parameters section of the table. The field at the global level beside this entry is empty. Beneath the VFB entry, the fields of the local level column are empty. But there are entries at the global level: VFBO, VFBL, VFBW, and VFBLW. Those parameters describe influences of the device geometry onto the behavior used in the global model. VFBO means the geometry-independent part of VFB, VFBL describes the length influence, and VFBW the width influence, whereas VFBLW describes the area influence of device geometry onto the flatband voltage of the device. Using this arrangement, you can easily see parameter correspondences between the local and the global model of the PSP hierarchy.

The following table lists all model parameters used. This table shows whether a local parameter has length and/or width dependant elements, which generally use the same parameter name followed by a L for a length dependency, a W for a width dependency, or a LW for a length and width dependency in the global model (second column of the table).

Parameters in the global parameter set that begin with the letters ST refer to the temperature scaling of a parameter.

Table 33 Parameters used for local and/or global model 

Parameter at Local level	Parameter at Global level	Description	Unit	Default	Min	Max
	LEVEL	Model selection parameter	-	1010	-	-
	TYPE	Channel type parameter: 1 = NMOS; -1 = PMOS	-
	TR	Reference temperature	°C	21	-273	-
Switch parameters
SWIGATE	SWIGATE	Flag for gate current: 0 = off	-	0	0	1
SWIMPACT	SWIMPACT	Flag for impact ionization current	-	0	0	1
SWGIDL	SWGIDL	Flag for GIDL/GISL current 0 = off	-	0	0	1
SWJUNCAP	SWJUNCAP	Flag for JUNCAP 0 = off	-	0	0	3
QMC	QMC	Quantum-mechanical correction factor	-	1	0	-
Process Parameters
	LVARO	Geometry independent difference between actual and programmed polysilicon gate length	m	0	-	-
	LVARL	Length dependence of difference between actual and programmed polysilicon gate length	-	0
	LVARW	Width dependence of difference between actual and programmed polysilicon gate length	-	0
	LAP	Effective channel length reduction per side due to lateral diffusion of source/drain dopant ions	m	0
	WVARO	Geometry independent difference between actual and programmed field-oxide opening		0
	WVARL	Length dependence of difference between the actual and the programmed field-oxide opening		0
	WVARW	Width dependence of difference between actual and programmed field oxide opening		0
	WOT	Effective reduction of channel width per side due to lateral diffusion of channel-stop dopant ions	m	0
	DLQ	Effective channel length offset for CV	m	0
	DWQ	Effective channel width offset for CV	m	0
VFB		Flat-band voltage at TR	V	0
	VFBO	Geometry-independent flat-band voltage at TR	V	-1
	VFBL	Length dependence of flat-band voltage		0
	VFBW	Width dependence of flat-band voltage		0
	VFBLW	Area dependence of flat-band voltage		0
STVFB		Temperature dependence of VFB	V/K	5E-4
	STVFB0	Geometry-independent temperature dependence of VFB	V/K	5E-4
	STVFBL	Length dependence of STVFB		0
	STVFBW	Width dependence of STVFB
	STVFBLW	Area dependence of STVFB
TOX		Gate oxide thickness at local level	m	2E-9	1E-10	-
	TOXO	Gate oxide thickness at global level	m	2E-9	1E-10
NEFF		Substrate doping	m-3	5E23	1E20	1E26
	NSUB0	Geometry independent substrate doping	m-3	3E23	1E20	-
	NSUBW	Width dependence of substrate doping due to segregation		0
	WSEG	Characteristic length of segregation of substrate doping	m	1E-8	1E-10	-
	NPCK	Pocket doping level	m-3	1E24	0	-
	NPCKW	Coefficient describing width dependence of pocket doping due to segregation	-	0
	WSEGP	Characteristic length of segregation of pocket doping	m	1E-8	1E-10	-
	LPCK	Characteristic length of lateral doping profile	m	1E-8	1E-10	-
	LPCKW	Coefficient describing width dependence of characteristic length of lateral doping profile	-	0
	FOL1	First order length dependence of short channel body effect	-	0
	FOL2	Second order length dependence of short channel body effect	-	0
VNSUB		Effective doping bias-dependence parameter	V	0
	VNSUBO	Effective doping bias-dependence parameter	V	0
NLSP		Effective doping bias-dependence parameter	V	0.05	1E-3	-
	NLSPO	Effective doping bias-dependence parameter	V	0.05	-	-
DNSUB		Effective doping bias-dependence parameter	V--1	0	0	-
	DNSUBO	Effective doping bias-dependence parameter	V--1	0	0	-
DPHIB		Offset of	V	0	-	-
	DPHIBO	Geometry independent offset of	V	0	-	-
	DPHIBL	Length dependence of DPHIB	-	0	-	-
	DPHIBLEXP	Exponent for length dependence of DPHIB	-	1	-	-
	DPHIBW	Width dependence of DPHIB	-	0	-	-
	DPHIBLW	Area dependence of DPHIB	-	0	-	-
NP		Gate poly-silicon doping	m-3	1E26	0	-
	NP0	Geometry-independent gate polysilicon doping	m-3	1E26	-	-
	NPL	Length dependence of gate poly-silicon doping		0
CT		Interface states factor	-	0	0	-
	CT0	Geometry-independent part of interface states factor CT	-	0	-	-
	CTL	Length dependence of interface states	-	0	-	-
	CTLEXP	Exponent describing length dependence of interface states factor CT	-	1	-	-
	CTW	Width dependence of interface states	-	0	-	-
	CTLW	Area dependence of CT	-	0	-	-
TOXOV		Overlap oxide thickness	m	2E-9	1E-10	-
	TOXOVO	Overlap oxide thickness	m	2E-9	1E-10	-
	LOV	Overlap length for gate/drain and gate/source overlap capacitance	m	0	0	-
NOV		Effective doping of overlap region	m-3	5E25	1E20	1E27
	NOVO	Effective doping of overlap region	m-3	5E25	-	-
DIBL Parameters
CF		DIBL-parameter	V-1	0	0	-
	CFL	Length dependence of DIBL-parameter	V-1	0	-	-
	CFLEXP	Exponent for length dependence of CF	-	2	-	-
	CFW	Width dependence of CF	-	0	-	-
CFB		Back-bias dependence of CF	V-1	0	0	-
	CFBO	Back-bias dependence of CF	V-1	0	0	1
Mobility Parameters
	UO	Zero-field mobility at TR	m2s/V	5E-2	-	-
	FBET1	Relative mobility decrease due to first lateral profile	-	0	-	-
	FBET1W	Width dependence of FBET1	-	0	-	-
	LP1	Mobility-related characteristic length of first lateral profile	m	1E-8	1E-10	-
	LP1W	Width dependence of LP1	-	0	-	-
	FBET2	Relative mobility decrease due to second lateral profile	-	0	-	-
	LP2	Mobility-related characteristic length of second lateral profile	m	1E-8	1E-10	-
BETN		Product of channel aspect ratio and zero field mobility at TR	m2s/V	7E-2	0	-
	BETW1	First higher-order width scaling coefficient of BETN	-	0	-	-
	BETW2	Second higher-order width scaling coefficient of BETN	-	0	-	-
	WBET	Characteristic width for width scaling of BETN	m	1E-9	1E-10	-
STBET		Temperature dependence of BETN	-	1	-	-
	STBETO	Geometry independent temperature dependence of BETN	-	1	-	-
	STBETL	Length dependence of STBET	-	0	-	-
	STBETW	Width dependence of STBET	-	0	-	-
	STBETLW	Area dependence of STBET	-	0	-	-
MUE		Mobility reduction coefficient at TR	m/V	0.5	0	-
	MUEO	Geometry independent mobility reduction coefficient at TR	m/V	0.5	-	-
	MUEW	Width dependence of MUE	-	0	-	-
STMUE		Temperature dependence of MUE	-	0	-	-
	STMUEO	Temperature dependence of MUE	-	0	-	-
THEMU		Mobility reduction exponent at TR	-	1.5	0	-
	THEMUO	Mobility reduction exponent at TR	-	1.5	0	-
STTHEMU		Temperature dependence of THEMU	-	1.5	-	-
	STTHEMUO	Temperature dependence of THEMU	-	1.5	-	-
CS		Coulomb scattering parameter at TR	-	0	0	-
	CSO	Geometry independent Coulomb scattering parameter at TR	-	0	-	-
	CSL	Length dependence of CS	-	0	-	-
	CSLEXP	Exponent for length dependence of CS	-	1	-	-
	CSW	Width dependence of CS	-	0	-	-
	CSLW	Area dependence of CS	-	0	-	-
STCS		Temperature dependence of CS	-	0	-	-
	STCSO	Temperature dependence of CS	-	0	-	-
XCOR		Non-universality parameter	V -1	0	0	-
	XCORO	Geometry independent non-universality parameter	V -1	0	-	-
	XCORL	Length dependence of XCOR	-	0	-	-
	XCORW	Width dependence of XCOR	-	0	-	-
	XCORLW	Area dependence of XCOR	-	0	-	-
STXCOR		Temperature dependence of XCOR	-	0	-	-
	STXCORO	Temperature dependence of XCOR	-	0	-	-
FETA		Effective field parameter	-	1	0	-
	FETAO	Effective field parameter	-	1	-	-
Series Resistance Parameters
RS		Source/drain series resistance at TR		30	0	-
	RSW1	Source/drain series resistance for channel width WEN at TR		2500	-	-
	RSW2	Higher-order width scaling of source/drain series resistance	-	0	-	-
STRS		Temperature dependence of RS	-	1	-	-
	STRSO	Temperature dependence of RS	-	1	-	-
RSB		Back-bias dependence of RS	V -1	0	-0.5	1
	RSBO	Back-bias dependence of RS	V -1	0	-	-
RSG		Gate-bias dependence of RS	V -1	0	-0.5	-
	RSGO	Gate-bias dependence of RS	V -1	0	-	-
Velocity Saturation Parameters
THESAT		Velocity saturation parameter at TR	V -1	1	0	-
	THESATO	Geometry independent velocity saturation parameter at TR	V -1	0	-	-
	THESATL	Length dependence of THESAT	V -1	0.05	-	-
	THESATLXP	Exponent for length dependence of THESAT	-	1	-	-
	THESATW	Width dependence of THESAT	-	0	-	-
	THESATLW	Area dependence THESAT	-	0	-	-
STTHESAT		Temperature dependence of THESAT	-	1	-	-
	STTHESATO	Geometry independent temperature dependence of THESAT	-	1	-	-
	STTHESATL	Length dependence of STTHESAT	-	0	-	-
	STTHESATW	Width dependence of STTHESAT	-	0	-	-
	STTHESATLW	Area dependence of STTHESAT	-	0	-	-
THESATB		Back-bias dependence of velocity saturation	V -1	0	-0.5	1
	THESATBO	Back-bias dependence of THESAT	V -1	0	-	-
THESATG		Gate-bias dependence of velocity saturation	V -1	0	-0.5	-
	THESATGO	Gate-bias dependence of THESAT	V -1	0	-	-
Saturation Voltage Parameters
AX		Linear/saturation transition factor	-	3	2	-
	AXO	Geometry independent linear/saturation transition factor	-	18	-	-
	AXL	Length dependence of AX	-	0.4	0	-
Channel Length Modulation (CLM) Parameters
ALP		CLM pre-factor	-	0.01	0	-
	ALPL	Length dependence of CLM pre-factor ALP	-	5E-4	-	-
	ALPLEXP	Exponent for length dependence of ALP	-	1	-	-
	ALPW	Width dependence of ALP	-	0	-	-
ALP1		CLM enhancement factor above threshold	V	0	0	-
	ALP1L1	Length dependence of CLM enhancement factor above threshold	V	0	-	-
	ALP1LEXP	Exponent describing the length dependence of ALP1	-	0.5	-	-
	ALP1L2	Second order length dependence of ALP1	-	0	0	-
	ALP1W	Width dependence of ALP1	-	0	-	-
ALP2		CLM enhancement factor below threshold	V -1	0	0	-
	ALP2L1	Length dependence of CLM enhancement factor below threshold	V	0	-	-
	ALP2LEXP	Exponent describing the length dependence ALP2	-	0.5	-	-
	ALP2L2	Second order length dependence of ALP2	-	0	0	-
	ALP2W	Width dependence of ALP2	-	0	-	-
VP		CLM logarithmic dependence parameter	V	0.05	1E-10	-
	VPO	CLM logarithmic dependence parameter	V	0.05	1E-10	-
Impact Ionization (II) Parameters
A1		Impact-ionization pre-factor	-	1	0	-
	A1O	Geometry independent part of impact ionization pre-factor A1	-	1	-	-
	A1L	Length dependence of A1	-	0	-	-
	A1W	Width dependence of A1	-	0	-	-
A2		Impact-ionization exponent at TR	V	10	0	-
	A2O	Impact-ionization exponent at TR	V	10	-	-
STA2		Temperature dependence of A2	V	0	-	-
	STA2O	Temperature dependence of A2	V	0	-	-
A3		Saturation-voltage dependence of II		-	1	0
	A3O	Geometry independent saturation-voltage dependence of II	-	1	-	-
	A3L	Length dependence of A3	-	0	-	-
	A3W	Width dependence of A3	-	0	-	-
A4		Back-bias dependence of II		0	0	-
	A4O	Geometry independent back-bias dependence of II		0	-	-
	A4L	Length dependence of A4	-	0	-	-
	A4W	Width dependence of A4	-	0	-	-
Gate Current Parameters
GCO		Gate tunnelling energy adjustment	-	0	-10	10
	GCOO	Gate tunneling energy adjustment	-	0	-	-
IGINV		Gate channel current pre-factor	A	0	0	-
	IGINVLW	Gate channel current pre-factor for a channel area of WEN x LEN	A	0	-	-
IGOV		Gate overlap current pre-factor	A	0	0	-
	IGOVW	Gate overlap current pre-factor for a channel width of WEN	A	0	-	-
STIG		Temperature dependence of gate current	-	2	-	-
	STIGO	Temperature dependence of gate current	-	2	-	-
GC2		Gate current slope factor	-	0.375	0	10
	GC2O	Gate current slope factor	-	0.375	-	-
GC3		Gate current curvature factor	-	0.063	-2	2
	GC3O	Gate current curvature factor	-	0.063	-	-
CHIB		Tunnelling barrier height	V	3.1	1	-
	CHIBO	Tunnelling barrier height	V	3.1	1	-
Gate Induced Drain Leakage (GIDL) Parameters
AGIDL		GIDL pre-factor	A/V3	0	0	-
	AGIDLW	Width dependence of GIDL pre-factor	A/V3	0	-	-
BGIDL		GIDL probability factor at TR	V	41	0	-
	BGIDLO	GIDL probability factor at TR	V	41	-	-
STBGIDL		Temperature dependence of BGIDL	V/K	0	-	-
	STBGIDLO	Temperature dependence of BGIDL	V/K	0	-	-
CGIDL		Back-bias dependence of GIDL	-	0	-	-
	CGIDLO	Back-bias dependence of GIDL	-	0	-	-
Charge Model Parameters
COX		Oxide capacitance for intrinsic channel	F	1E-14	0	-
CGOV		Oxide capacitance for gate–drain/source overlap	F	1E-15	0	-
CGBOV		Oxide capacitance for gate–bulk overlap	F	0	0	-
	CGBOVL	Oxide capacitance for gate–bulk overlap for an area of WEN x LEN	F	0	-	-
CFR		Outer fringe capacitance	F	0	0	-
	CFRW	Outer fringe capacitance for a channel width of WEN	F	0	-	-
Noise Model Parameters
FNT		Thermal noise coefficient	-	1.0	0	-
	FNTO	Thermal noise coefficient	-	1.0	-	-
NFA		First coefficient of flicker noise	V -1/m4	8E22	0	-
	NFALW	First coefficient of flicker noise for a channel area of WEN x LEN	V -1/m4	8E22	-	-
NFB		Second coefficient of flicker noise	V -1/m2	3E7	0	-
	NFBLW	Second coefficient of flicker noise for a channel area of WEN x LEN	V -1/m2	3E7	-	-
NFC		Third coefficient of flicker noise	V -1	0	0	-
	NFCLW	Third coefficient of flicker noise for a channel area of WEN x LEN	V -1	0	-	-
Other Parameters
DTA		Temperature offset with respect to ambient circuit temperature	K	0	-	-
	DTA	Temperature offset with respect to ambient circuit temperature	K	0	-	-
Parameters for the Source/Drain-Bulk Junction Model
TRJ		Reference temperature	°C	21	-273	-
IMAX		Maximum current up to which forward current behaves exponentially	A	1000	1E-12	-
Capacitance Parameters
CJORBOT		Zero-bias capacitance per area unit of bottom component	F/m²	1E-3	1E-12	-
CJORSTI		Zero-bias capacitance per length unit of STI-edge component	F/m	1E-9	1E-18	-
CJORGAT		Zero-bias capacitance per length unit of gate-edge component	F/m	1E-9	1E-18	-
VBIRBOT		Built-in voltage at the reference temperature of bottom component	V	1	Vbi,low	-
VBIRSTI		Built-in voltage at the reference temperature of STI-edge component	V	1	Vbi,low	-
VBIRGAT		Built-in voltage at the reference temperature of gate-edge component	V	1	Vbi,low	-
PBOT		Grading coefficient of bottom component	-	0.5	0.05	0.95
PSTI		Grading coefficient of STI-edge component	-	0.5	0.05	0.95
PGAT		Grading coefficient of gate-edge component	-	0.5	0.05	0.95
Ideal-current Parameters
PHIGBOT		Zero-temperature bandgap-voltage of bottom component	V	1.16	-	-
PHIGSTI		Zero-temperature bandgap-voltage of STI-edge component	V	1.16	-	-
PHIGGAT		Zero-temperature bandgap-voltage of gate-edge component	V	1.16	-	-
IDSATRBOT		Saturation-current density at the reference temperature of bottom component	A/m²	1E-12	0	-
IDSATRSTI		Saturation-current density at the reference temperature of STI-edge component	A/m	1E-18	0	-
IDSATRGAT		Saturation-current density at the reference temperature of gate-edge component	A/m	1E-18	0	-
CSRHBOT		Shockley-Read-Hall prefactor of bottom component	A/m³	1E2	0	-
CSRHSTI		Shockley-Read-Hall prefactor of STI-edge component	A/m²	1E-4	0	-
CSRHGAT		Shockley-Read-Hall prefactor of gate-edge component	A/m²	1E-4	0	-
XJUNSTI		Junction depth of STI-edge component	m	1E-7	1E-9	-
XJUNGAT		Junction depth of gate-edge component	m	1E-7	1E-9	-
CTATBOT		Trap-assisted tunneling prefactor of bottom component	A/m³	1E2	0	-
CTATSTI		Trap-assisted tunneling prefactor of STI-edge component	A/m²	1E-4	0	-
CTATGAT		Trap-assisted tunneling prefactor of gate-edge component	A/m²	1E-4	0	-
MEFFTATBOT		Effective mass (in units of m0) for trap-assisted tunneling of bottom component	-	0.25	0.01	-
MEFFTATSTI		Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component	-	0.25	0.01	-
MEFFTATGAT		Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component	-	0.25	0.01	-
Band-to-band Tunneling Parameters
CBBTBOT		Band-to-band tunneling prefactor of bottom component	AV -3	1E-12	0	-
CBBTSTI		Band-to-band tunneling prefactor of STI-edge component	AV -3	1E-18	0	-
CBBTGAT		Band-to-band tunneling prefactor of gate-edge component	AV -3	1E-18	0	-
FBBTBOT		Normalization field at the reference temperature for band-to-band tunneling of bottom component	V/m	1E-9	-	-
FBBTSTI		Normalization field at the reference temperature for band-to-band tunneling of STI-edge component	V/m	1E-9	-	-
FBBTGAT		Normalization field at the reference temperature for band-to-band tunneling of gate-edge component	V/m	1E-9	-	-
STFBBTBOT		Temperature scaling parameter for band-to-band tunneling of bottom component	1/K	-1E-3	-	-
STFBBTSTI		Temperature scaling parameter for band-to-band tunneling of STI-edge component	1/K	-1E-3	-	-
STFBBTGAT		Temperature scaling parameter for band-to-band tunneling of gate-edge component	1/K	-1E-3	-	-
Avalange and Breakdown Parameters
VBRBOT		Breakdown voltage of bottom component	V	10	0.1	-
CBBTSTI		Breakdown voltage of STI-edge component	V	10	0.1	-
CBBTGAT		Breakdown voltage of gate-edge component	V	10	0.1	-
PBRBOT		Breakdown onset tuning parameter of bottom component	V	4	0.1	-
PBRSTI		Breakdown onset tuning parameter of STI-edge component	V	4	0.1	-
PBRGAT		Breakdown onset tuning parameter of gate-edge component	V	4	0.1	-