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PSP Characterization
This chapter provides a theoretical background for the PSP model. It is based on model revision PSP102.0, released in June 2006.
Using the Modeling Packages is described in Chapter 1, "Using the MOS Modeling Packages."
The PSP model is a compact MOSFET model intended for digital, analog, and RF design. PSP is a surface-potential based model and includes all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, STI stress, etc.) needed to model deep submicron bulk CMOS technologies. A source/drain junction model, the JUNCAP2 model, is an integrated part of PSP.
In December 2005, the Compact Model Council (CMC) selected PSP as the new industrial standard model for compact MOSFET modeling.
The PSP source code, user manual, and testing examples can be downloaded at: http://pspmodel.asu.edu