Manuals >Reference >Agilent EEHEMT1 Model Equations
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References

  1   W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Transactions of Microwave Theory and Techniques, Vol. MTT-28, pp. 448-456, May 1980.

  2   P. C. Canfield, "Modeling of frequency and temperature effects in GaAs MESFETs" IEEE Journal of Solid-State Circuits, Vol. 25, pp. 299-306, Feb. 1990.

  3   J. M. Golio, M. Miller, G. Maracus, D. Johnson, "Frequency dependent electrical characteristics of GaAs MESFETs," IEEE Trans. Elec. Devices, vol. ED-37, pp. 1217-1227, May 1990.

  4   H. Statz, P. Newman, I. Smith, R. Pucel, H. Haus. "GaAs FET device and circuit simulation in SPICE," IEEE Trans. Elec. Devices, vol. ED-34, pp. 160-169, Feb. 1987.

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