Manuals >Reference >Agilent EEHEMT1 Model Equations
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Gate Forward Conduction and Breakdown

Forward conduction in the gate junction is modeled using a standard 2-parameter diode expression. The current for this gate-source current is:

where q is the charge on an electron, k is Boltzmann's constant, and T is the junction temperature.

The Agilent EEHEMT1 breakdown model was developed from measured DC breakdown data and includes the voltage dependency of both gate-drain and gate-source junctions. Agilent EEHEMT1 models breakdown for Vds > 0V only, breakdown in the Vds < 0V region is not handled. The model consists of 4 parameters that are easily optimized to measured data. The breakdown current is given by:

for -Vgd > VBR

for -Vgd VBR

Some care must be exercised in setting IDSOC. This parameter should be set to the maximum value attainable by Ids. This precludes the possibility of the gate-drain current flowing in the wrong direction.

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