Manuals >Reference >Agilent EEFET3 Model Equations
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Gate Forward Conduction and Breakdown

Forward conduction in the gate junction is modeled using a standard 2-parameter diode expression. The current for this gate-source current is:

where q is the charge on an electron, k is Boltzmann's constant and T is the junction temperature.

The Agilent EEFET3 breakdown model was developed from measured DC breakdown data and includes the voltage dependency of both gate-drain and gate-source junctions. Agilent EEFET3 models breakdown for Vds>0V only, breakdown in the Vds<0V region is not handled. The model consists of 4 parameters that are easily optimized to measured data. The breakdown current is given by:

For -Vgd > VBR

For

Some care must be exercised in setting IDSOC. This parameter should be set to the maximum value attainable by Ids. This precludes the possibility of the gate-drain current flowing in the wrong direction.

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