Manuals >Reference >Agilent EEBJT2 Model Equations Print version of this Book (PDF file) |
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Base-Emitter and Base-Collector CapacitancesDiffusion and depletion capacitances are modeled for both junctions of the transistor model in a manner very similar to the Gummel-Poon model. The diffusion capacitance for Cbe is somewhat differently formulated vs. that of Cbc. The transit time is not a constant for the diffusion capacitance for Cbe, but is a function of both junction voltages, formulated in a manner similar to the modified Gummel-Poon model. The total base-emitter charge is equal to the sum of the base-emitter depletion charge (which is a function of Vbe only) and the so-called transit charge (which is a function of both Vbe and Vbc). |
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