Manuals >Reference >Agilent EEBJT2 Model Equations
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Base-Emitter and Base-Collector Capacitances

Diffusion and depletion capacitances are modeled for both junctions of the transistor model in a manner very similar to the Gummel-Poon model.

For Vbc FC VJC

where

and

For Vbc > FC VJC

For Vbe FC VJE

where

For Vbe > FC VJE

The diffusion capacitance for Cbe is somewhat differently formulated vs. that of Cbc. The transit time is not a constant for the diffusion capacitance for Cbe, but is a function of both junction voltages, formulated in a manner similar to the modified Gummel-Poon model. The total base-emitter charge is equal to the sum of the base-emitter depletion charge (which is a function of Vbe only) and the so-called transit charge (which is a function of both Vbe and Vbc).

where

and

and

Equivalent Circuit

Intrinsic Model


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