MM9_COPY

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MM9_COPY

Copies an input array to a measured or simulated output dataset.

Input Arguments:

Data Sets:

Copy from ( Dataset Name)

Strings/Pars/Vars:

Copy to (Dataset Name) M or S

Output:

None

MM9_DATA

Enables printing of the data measured for quick extraction.

Input Arguments:

"" or "<filename>"

Example:

x = MM9_DATA("")
or
x = MM9_DATA("mm9_print")

If no argument is supplied, the data will be printed to the Status window; if a filename is supplied, the data will be appended to that file.

MM9_GEOMPAR

Updates the simulated values of the miniset parameters in the setups extract/par_vs_L, extract/par_vs_W and extract/par_vs_R in the MOS Model 9.

MM9_GEOMSCAL

Determines a first guess for the maxiset parameters of a MOS Model 9 by regression.

MM9_KEEP

Accepts an input array and copies it directly to the transform output.

Input Arguments:

Data Sets:

Keep array (Dataset name)

Output:

Array of complex, size determined by inputs

MM9_LIN_EXT

Extracts the linear region parameters for the MOS Model 9.

Input Arguments:

None

Extracts:

VTO, KO, K, VSBX, BET, THE1, THE2

MM9_SAT_EXT

Extracts the saturation region parameters for the MOS Model 9.

Input Arguments:

None

Extracts:

THE3, GAM1, ETADS, ALP, VP

MM9_SAVE_SPARS

Saves the MOS Model 9 parameters of a single device (miniset) to a file.

MM9_SETUP

Allows you to specify the setups for the MOS Model 9 parameter extraction.

MM9_STH_EXT

Extracts the subthreshold region parameters for the MOS Model 9.

Input Arguments:

None

Extracts:

GAMOO, MO, ZET1, VSBT

MM9_TEMPPAR

Updates the simulated values of the miniset parameters in the setups extract/par_vs_T in the MOS Model 9.

MM9_TEMPSCAL

Determines a first guess for the maxiset temperature parameters of a MOS Model 9 by regression.

MM9_WEAVAL_EXT

Extracts the weak avalanche region (substrate current) parameters for the MOS Model 9.

Input Arguments:

None

Extracts:

A1, A2, A3

MOS_process_pars

Allows you to specify initial values for the MOS process related parameters LD, RS, RSH, TOX, WD, and XJ. The drain resistance RD is set equal to the specified value of RS.

Input Arguments:

Data Sets:

Lateral Diffusion, Source Resistance, Sheet Resistance, Oxide Thickness, Width Reduction, Junction Depth

Output:

None

Extracts:

(not applicable)

Automatic Invocation:

By Extract menu function

MOSCV_total_cap

Extracts the total PN junction capacitance parameters from the bottom and sidewall. Requires C-V measurement on 2 different geometries. The first measurement should be on a device in which the bottom capacitance dominates. The second measurement should be on a device in which the sidewall capacitance dominates.

Input Arguments:

Data Sets:

Cap 1, Cap 2, Junction V

Reals or Integers:

Cap 1 Area, Cap 1 Perim, Cap 2 Area, Cap 2 Perim

Output:

None

Extracts:

CJ, MJ, CJSW, MJSW, PB

Automatic Invocation:

By Extract menu function

MOSCVmodCBD

Calculates the Bulk-Drain junction capacitance according to the UCB MOS model.

Input Arguments:

Data Sets:

Junction V

Output:

Array of complex; size determined by inputs

Automatic Invocation:

None

MOSCVmodCBS

Calculates the Bulk-Source junction capacitance according to the UCB MOS model.

Input Arguments:

Data Sets:

Junction V

Output:

Array of complex; size determined by inputs

Automatic Invocation:

None

MOSDC_lev2_lin_large

Standard extraction for the UCB MOS model. Extracts classical Level 2 parameters, using I_d versus V_g data from a large device. Initializes the parameter NFS for later optimization.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

VTO, NSUB, UO, UEXP, VMAX

Automatic Invocation:

By Extract menu function

MOSDC_lev2_lin_narrow

Standard extraction for the UCB MOS model. Extracts Level 2 width parameters, using I_d versus V_g data from a narrow device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

WD, DELTA

Automatic Invocation:

By Extract menu function

MOSDC_lev2_lin_short

Standard extraction for the UCB MOS model. Extracts Level 2 length effect parameters, using I_d versus V_g data from a short-channel device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

XJ, LD

Automatic Invocation:

By Extract menu function

MOSDC_lev2_sat_short

Standard extraction for the UCB MOS model. Extracts Level 2 saturation parameters, using Id versus Vd data from a short-channel device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

VMAX, NEFF

Automatic Invocation:

By Extract menu function

MOSDC_lev3_lin_large

Standard extraction for the UCB MOS Level 3 model. Extracts classical Level 3 parameters, using I_d versus V_g data from a large device. Initializes the parameter NFS for later optimization.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

VTO, NSUB, UO, THETA, VMAX

Automatic Invocation:

By Extract menu function

MOSDC_lev3_lin_narrow

Standard extraction for the UCB MOS Level 3 model. Extracts Level 3 width parameters, using I_d versus V_g data from a narrow device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

WD, DELTA

Automatic Invocation:

By Extract menu function

MOSDC_lev3_lin_short

Standard extraction for the UCB MOS Level 3 model. Extracts Level 3 length effect parameters, using I_d versus V_g data from a short device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

RS, RD, LD, XJ

Automatic Invocation:

By Extract menu function

MOSDC_lev3_sat_short

Standard extraction for the UCB MOS Level 3 model. Extracts Level 3 saturation parameters, using I_d versus V_d data from a short device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

VMAX, KAPPA, ETA

Automatic Invocation:

By Extract menu function

MOSDC_lev6_lin_large

Standard extraction for the HSPICE MOS Level 6 model. Extracts classical Level 6 parameters, using I_d versus V_g data from a large device. Initializes the parameter NFS for later optimization.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

PHI, VT, LGAMMA, GAMMA, VBO, LAMBDA, UB, NFS

Automatic Invocation:

By Extract menu function

MOSDC_lev6_lin_narrow

Standard extraction for the HSPICE MOS Level 6 model. Extracts Level 6 width parameters, using I_d versus V_g data from a narrow device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

NWM, WDEL, DELTA

Automatic Invocation:

By Extract menu function

MOSDC_lev6_lin_short

Standard extraction for the HSPICE MOS Level 6 model. Extracts Level 6 length effect parameters, using I_d versus V_g data from a short device.

Input Arguments:

Data Sets:

Gate V, Bulk V, Drain V, Drain I

Output:

None

Extracts:

SCM, XJ, LDEL

Automatic Invocation:

By Extract menu function

MOSmodel

Simple, level 1 UCB MOS model. Calculates Id from voltages.

Input Arguments:

Data Sets:

Drain V, Gate V, Bulk V, Source V

Output:

Array of complex; size determined by inputs

Automatic Invocation:

None

MOSmodel2

Complete UCB MOS model, containing levels 1, 2, and 3. Calculates I_d from voltages.

Input Arguments:

Data Sets:

Drain V, Gate V, Bulk V, Source V

Output:

Array of complex; size determined by inputs

Automatic Invocation:

None

MXT_cbc

Mextram model version: 504

This function calculates the total base-collector depletion capacitance Cbc vs. bias given vbc.

Inputs:

VBC:

base-collector voltage

Output:

calculated total base-collector capacitance.

See Philips Report NL-UR 2001/801, section 2.5.2 for more details.

MXT_cbe

Mextram model version: 504

This function calculates the total base-emitter depletion capacitance Cbe vs. bias given vbe.

Inputs:

VBE:

base-emitter voltage

Output:

calculated total base-emitter depletion capacitance.

See Philips Report NL-UR 2001/801, section 2.5.1 for more details.

MXT_cj0

Mextram model version: 504

This function extracts the zero-bias junction capacitance, Cje0, Cjc0 or Cjs0 depending on which Output mode is selected: E/C/S. The total bias range needs to include V = 0 V, but it is not necessary that one of the Vj value is indeed zero.

See Philips Report NL-UR 2001/801, sections 2.5.1-2.5.3 for more details.

MXT_csc

Mextram model version: 504

This function calculates the total substrate-collector depletion capacitance Csc vs. bias given vsc.

Inputs:

VSC:

substrate-collector voltage

Output:

calculated total substrate-collector depletion capacitance.

See Philips Report NL-UR 2001/801, section 2.5.3 for more details.

MXT_forward_hfe

Mextram model version: 504

This function calculates hfe given veb,vcb and ic.m. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0 the transform will use the measured collector current to determine the upper limit for extracting the parameters: BF, IBF and MLF. This limit is determined by the onset of high-injection. The function is used in the dc_gummel/Forward setup to extract the non ideal base current parameters IBF, MLF and the forward current gain BF.

Inputs:

   VEB:

emitter-base voltage.

   VCB:

collector-base voltage (it should be constant)

   IC:

measured collector current

Output:

forward current gain Ic//Ib

See Philips Report NL-UR 2001/801, section 2.5.8 for more details.

MXT_forward_ic

Mextram model version: 504

This function calculates ic given veb and vcb. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0 this transform will also require ic.m as an input. The transform uses the measured collector current to determine the upper limit for extracting the parameter: IS. This limit is set by the onset of high-injection. The function is used to extract IS in the setup dc_gummel/Forward.

Inputs:

   VEB:

emitter-base voltage.

   VCB:

collector-base voltage (this should be constant in a forward gummel plot )

   IC:

measured collector current (used for auto-ranging)

Output:

calculated ideal forward collector current (DO NOT include series resistances, high injection, quasi-sat etc.)

See Philips Report NL-UR 2001/801, section 2.5.7 for more details.

MXT_forward_vbe

Mextram model version: 504

This function calculates vbe given vcb, ic.m and ib.m. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform will also require veb (ve-vb) as an input. The transform is used to optimize RE in the setup dc_gummel/Forward.

Inputs:

   IC:

measured collector current.

   IB:

measured base current.

   VEB:

external measured Veb (used for auto-ranging only)

Output:

external voltage Vbe.

See Philips Report NL-UR 2001/801, section 2.5.9 for more details.

MXT_ft

Mextram model version: 504

This function calculates the cut-off frequency fT as a function of Ic, Vbe and Vce. The function is used to extract the transit time parameters as well as several other high current parameters.

Inputs:

   IC:

measured collector current.

   VBE:

base-emitter voltage.

   VCE:

collector-emitter voltage.

Output:

calculated fT.

See Philips Report NL-UR 2001/801, section 2.6 for more details.

MXT_hard_sat_isub

Mextram model version: 504

This function calculates the substrate current in hard saturation. It is used in the dedicated setup dc_paras/Rc_active to extract the parameter RCC.

Inputs:

   VBC:

base-collector voltage.

   IC:

measured collector current.

   IB:

measured base current.

Output:

calculated substrate current in hard saturation.

See Philips Report NL-UR 2001/801, section 2.5.10 for more details.

MXT_ic_vce

Mextram model version: 504

This function calculates the collector current or the base emitter voltage (depending on the selected Output) as function of the voltage difference Vce and the base current Ib. Ic is used to correct for series resistances. Vbe and Is are used for setting initial values in the calculation and for auto-ranging.

Note


		Auto-ranging is always ON for this function, regardless of the value of the variable MXT_AUTO_RANGE.

The function is used to extract the model variable RTH (thermal resistance) and several other parameters in combination with the MXT_ft transform. RTH along with Ic and Vce are used to calculate a new simulation temperature. To remove RTH's influence on the simulation temperature, set RTH to zero.

Inputs:

   VCE:

collector-emitter voltage.

   IB:

measured base current.

   IC:

measured collector current.

   VBE:

base-emitter voltage.

   ISUB:

measured substrate current.

   Output [i/v]:

choice of collector current (i) or base-emitter voltage (v)

   Avalanche [y/n]:

Yes/No flag.

Output:

calculated collector current or base-emitter voltage.

See Philips Report NL-UR 2001/801, section 2.6 for more details.

MXT_I0

Mextram model version: 504

This function extracts either IE0, IC0, or IB0 depending on which Output mode is selected: E/C/B. The function requires a terminal current as input. This transform uses the array of current data Idata and takes the first value at index 0. The I0 value can be used in the forward-Early and reverse-Early measurements to get a first estimate of the current offset. The subsequent optimizations, which require either IE0, IB0 or IC0, provide more robust results. Sometimes the optimizer will have trouble converging to a proper solution if these currents are too far from their final values.

Inputs:

Idata:

dataset with current data

Choice of outputs:

E/C/B

Output:

Sets the value of the model variables IE0,IC0 or IB0

See Philips Report NL-UR 2001/801, section 2.5.4-2.5.6 for more details.

MXT_jun_cap

Mextram model version: 504

This function calculates Cbe, Cbc, or Csc vs junction voltage given vbe, vbc, or vsc. This function combines the functionalities of the 3 functions: MXT_cbe, MXT_cbc, MXT_csc.

Input Arguments:

VJUN

junction voltage: vbe, vbc, or vsc

OUTPUT: E/C/S

Code to indicate which junction to calculate
E (default) Cbe: requires vbe as VJUN input
C Cbc: requires vbc as VJUN input
S Csc: requires vsc as VJUN input

Output:

junction capacitance vs junction voltage data

MXT_reverse_currents

Mextram model version: 504

Selecting Output=B calculates ib given vbc, vbe and ie. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform will use the measured emitter current to determine the lower limit for extracting the parameters: XEXT and IKS. This limit is set by the onset of high-injection.

Selecting Output=S calculates is given vbc, vbe and ie. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform will use the measured emitter current to determine the lower limit for extracting the parameters: XEXT and IKS. This limit is set by the onset of high-injection.

Selecting Output=E calculates ie given vbc, vbe and ie. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform will use the measured emitter current to determine the lower limit for extracting the parameters: XEXT and IKS. This limit is set by the onset of high-injection.

Inputs:

   VBC:

base-collector voltage.

   VBE:

base-emitter voltage.

   IE:

measured emitter current (for auto-ranging only)

   Output [E/B/S]:

select:
E for emitter current
B for base current
S for substrate current

Output:

calculated reverse current (emitter/base or substrate).

See Philips Report NL-UR 2001/801, section 2.6.7 for more details.

MXT_reverse_hfc

Mextram model version: 504

This function calculates HFC (ie/ib) given veb, vcb and ie.m. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform uses the measured emitter current to determine the upper limit for extracting the parameter BR, IBR, VLR. This limit is set by the onset of high-injection. This transform has an additional input: substrate (y/n). This is used to calculate the reverse beta with or without the addition of the substrate current.

Inputs:

   VCB:

collector-base voltage.

   VEB:

emitter-base voltage.

   IE:

measured emitter current (for auto-ranging only)

   I Substrate [Y/N]:

yes or no field.

Output:

calculated reverse current gain
Hfc= Ie//Ib = Ie/(Iex+Ib3+Isub)

See Philips Report NL-UR 2001/801, section 2.5.12 for more details.

MXT_reverse_hfc_sub

Mextram model version: 504

This function calculates the substrate to emitter current gain: HFCsub (-ie/is) given veb and vcb. The function is used in the setup dc_gummel/Reverse to extract the parameter ISS. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform will require 2 additional inputs: emitter and substrate currents (ie) & (is). The transform uses the measured emitter & substrate currents to determine the upper limit for extracting the parameter ISS. This limit is set by the onset of high-injection in both the emitter and substrate currents.

Inputs:

   VEB:

emitter-base voltage.

   VCB:

collector-base voltage.

   IE:

measured emitter current

   IS:

measured substrate current.

Output:

calculated substrate to emitter current gain Ie//Isub

See Philips Report NL-UR 2001/801, section 2.5.11 for more details.

MXT_reverse_isub

Mextram model version: 504

This function calculates the substrate current for low reverse conditions. It can be used to extract the parameter ISS, however Philips recommends another method (see section 2.5.11).

Inputs:

VBC:

base-collector voltage (positive as transistor reverse biased)

IS:

measured Is (used for auto-ranging only)

Output:

calculated substrate current Isub = ISS*(exp(Bbc/VT)-1) where VT is the thermal voltage.

See Philips Report NL-UR 2001/801, section 2.5.11 for more details.

MXT_show_parms

Mextram model version: 504

This function prints all the Mextram parameters at the actual ambient temperature set by the variable TEMP. The functions will use these parameters in their calculations.

See Philips Report NL-UR 2001/801, section 5.1.1 for more details.

mxt_smooth

This function is obsolete.

This function performs a smoothing function on the data.

Input Arguments:

   Y Data

unitless

   Smooth Points

number of points on either side of data point to be use for smoothing.
0 = disable

   Smooth Iter

number of iterations that smoothing algorithm is performed on data.
0 = disable

Output:

Smoothed data.

MXT_veaf_ib

Mextram model version: 504

This function calculates the base current in a forward early measurement. It is used in the setup dc_early_avl/Fwd_early to extract the avalanche parameters VAVL and WAVL.

Inputs:

   VCB:

collector-base voltage.

   IC:

measured collector current.

   the function uses the model variable IB0

Output:

calculated base current

See Philips Report NL-UR 2001/801, section 2.5.4 for more details.

MXT_veaf_ic

Mextram model version: 504

This function calculates forward current ic given vcb, veb and the model variable IC0. When the MODEL variable MXT_AUTO_RANGE is set to the value 1.0, the transform will require one additional input: base current ib. The transform uses the measured base current to determine the onset of weak avalanche breakdown. This sets the upper limit of the optimization, opt_Veaf.

Inputs:

   VCB:

collector-base voltage.

   VEB:

emitter-base voltage (this should be constant).

   IB:

measured base current, used for autorange only.

   the function uses the model variable IC0

Output:

calculated collector current Ic (transistor forward bias)

See Philips Report NL-UR 2001/801, section 2.5.6 for more details.

MXT_vear_ie

Mextram model version: 504

This function calculates ie when the base emitter junction is reversed biased, and the base collector junction is forward biased. Vcb is assumed to be constant. The function is used in the setup dc_early_avl/Rev_early to extract the parameter VER.

Inputs:

   VEB:

emitter-base voltage.

   VCB:

collector-base voltage (it should be constant and > 0).

   the function uses the model variable IE0.

Output:

emitter current Ie (transistor reverse biased)

See Philips Report NL-UR 2001/801, section 2.5.5 for more details.

MXT_VEF

Mextram model version: 504

This function calculates a starting value for the parameter VEF. The Model Parameter list is updated and the extracted value is printed in the status window. To extract VEF, run this transform first and then optimization opt_VEF in the setup dc_early_avl/Fwd_early.

Input Argument:

VCB:

collector-base voltage.

IC:

measured collector current

See Philips Report NL-UR 2001/801, section 2.5.6 for more details.

MXT_VER

Mextram model version: 504

This function calculates a starting value for the parameter VER. The Model Parameter list is updated and the extracted value is printed in the status window. To extract VER, run this transform first and then optimization opt_VER in the setup dc_early_avl/Rev_early.

Input Argument:

VCB:

collector-base voltage.

IC:

measured collector current

See Philips Report NL-UR 2001/801, section 2.5.5 for more details.

mxt3t_cbc

This function is obsolete.

This function calculates Cbc verses base collector junction voltage.

Input Arguments:

Vbc

Vbc Voltage (V)

Output:

Cbc

mxt3t_cbe

This function is obsolete.

This function calculates Cbe verses base emitter junction voltage.

Input Arguments:

Vbe

Vbe Voltage (V)

Output:

Cbe

mxt3t_cj0

This function is obsolete.

This function extracts the zero-bias junction capacitance, Cje0, or Cjc0 depending on which Output mode is selected: E/C/S.

Input Arguments:

   Junction Voltage V

   Junction Capacitance C

   Junction: E, C

Output:

Cje or Cjc depending on Junction argument