Manuals >Reference >IC-CAP Functions Print version of this Book (PDF file) |
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EEmos1_s2cktConverts S-parameters to a table of linear equivalent circuit element values.
EEmos1_ s2ckt (S_parameter, Frequency, Vg, Vd, Conductance_Frequency, Capacitance_Frequency, Delay_Frequency)
This function returns a data set containing S-parameters computed from a linear equivalent circuit model. Element values for the linear equivalent circuit model are extracted from the input S-parameter data set. The table of element values for the linear equivalent circuit model are stored internally to IC-CAP and can be accessed using EEmos1_lecp(). In this manner, you can both examine how well the linear equivalent circuit model fits measured S-parameter data over frequency and see how the element values behave over bias. The reason for this 2-step process is that each IC-CAP function can only return a data set of the same type and dimension as the input data set. In the first step (EEmos1_s2ckt) S-parameters are input (over frequency and bias) and a computed set of S-parameters is returned (over frequency and bias). The values of the linear equivalent circuit model extracted are saved in a special internal structure. The second step is to create a DUT/Setup that only sweeps bias, not frequency. The function EEmos1_lecp is then used to access the internal data structure and return the linear equivalent circuit element value requested. The output is then of the same type and array size as the bias range. Element values can then be plotted against bias. computed_s_parameters = EEmos1_s2ckt(s_data, freq, Vg, Vd, FG, FC, Ftau) and in another DUT/Setup the next function recalls Cgs saved Cgs_data = EEmos1_lecp(Vg, Vd, "cgs") EEmos1_sparsComputes modeled S-parameters based on the current set of model parameters.
EEmos1_ spars (measured_S_parameter_data_set, Frequency, Vg, Vd)
Computes the bias-dependent model's intrinsic S-parameters at each bias and frequency specified. The S-parameter data set used as an input is only for the purpose of defining the type and quantity of data this function will supply as an output. Typical use would be comparing the computed set of S-parameters to a set of measured data and using that measured data as the S-parameter data set supplied as input to this function computed_s_parameters = EEmos1_spars(s_data, freq, Vg, Vd) equationUses the Parameter Extraction Language interpreter to evaluate an expression and produce a data set. This function is rarely needed, since arithmetic expressions are directly accepted in plot definitions and in the input fields to all of the other functions listed here.
Input (must be IC-CAP recognized data names and not strings in quote marks)
Complex number, matrix, complex array, or matrix array (depends on input argument)
expThe arithmetic exponential function; the inverse of the function log.
Complex number, matrix, complex array, or matrix array (depends on input argument)
fit_lineCalculates and returns a least-squares fitted line. Accepts an X data set followed by a Y data set. If the Y data has multiple curves (steps), fit_line yields multiple fitted lines, 1 for each curve. Use linfit for the slope and intercept, rather than a plottable data set. If the OVERRIDE_LIMITS variable is TRUE, the limits can be specified manually with the X_LOW and X_HIGH variables, which can be set from the Plot menu. Note: the imaginary part of the input data sets is disregarded. floorReturns the largest integer not greater than the given value. FNPortSwitching matrix function. Returns the port address for the specified port number. The port address is used by the Connect function. For more information regarding this function, refer to External Matrix Driver User Functions for more information. GAASAC_calc_rcCalculates capacitance and AC parameters from S-parameter measurements. Requires the following setup: If S-parameter data from the parasitic_r_l setup is supplied as an input, this data is converted to Z-parameters and subtracted before calculating the intrinsic values for Zds. This function can be used to plot the data that is used for extraction in the GAASAC_r_and_c function. Output is a complex array that is controlled by the Mode input. Valid modes are:
GAASAC_calc_rlCalculates inductances and resistances from an S-parameter measurement made at a single bias. Requires the following setup: Determine the bias point by measuring the device with the gate strongly forward biased. Typically, Vd = Vs = 0 with Vg positive. Ig should be more than 100 mA/mm, with Id approximately equal to Ig/2 at a typical operating frequency. This function can be used to plot the resistance and inductance data that is used for extraction in the GAASAC_l_and_r function. Output is in the form of Z data for the G, D, or S Node. If IG is specified as an input, the dynamic resistance is subtracted during the calculation of RG. If Deembed is TRUE, the bond inductance and pad capacitance are used in the calculation of resistance and inductance. GAASAC_curStandard extraction for the Curtice GaAs model. Extracts the capacitance and AC parameters from S-parameter measurements. Requires the following setup: If the variables LINEAR_CGS, LINEAR_CGD, or CONSTANT_TAU are true, CGS, CGD, or TAU are extracted, respectively. Depending on the device, optimization may be required to tune the parameter values. GAASAC_l_and_rStandard extraction for the UCB and Curtice GaAs models. Extracts inductances and resistances from an S-parameter measurement made at a single bias. Requires the following setup: Determine the bias point by measuring the device with the gate strongly forward biased. Typically, Vd = Vs = 0 with Vg positive. Ig should be more than 100 mA/mm, with Id approximately equal to Ig/2 at a typical operating frequency. The frequency can be either constant or swept. The extracted parameter values are averaged over a frequency range specified by the X_LOW and X_HIGH variables, which can be set from the Plot menu. If these variables are not set, the entire frequency range is used. If IG is specified as an input, the dynamic resistance is subtracted during the calculation of RG. If Deembed is true, the bond inductance and pad capacitance are used in the calculation of resistance and inductance. Optimization can be used to tune the parameter values, but should not typically be required. GAASAC_r_and_cAlternate AC extraction for the UCB and Curtice GaAs models. Extracts the capacitance and AC parameters from S-parameter measurements. Requires the following Setup: The extracted parameter values are averaged over a frequency range specified by the X_LOW and X_HIGH variables, which can be set from the Plot menu. If these variables are not set, the entire frequency range is used. For the Curtice model, if the variables LINEAR_CGS, LINEAR_CGD, or CONSTANT_TAU are TRUE, CGS, CGD, or TAU are extracted, respectively. Also for the Curtice Model, the parameters CGDN, RGDN, and RDS are extracted if they are defined as either parameters or variables. If CGDN is defined, then both CGD and CGDO are set to 0. For the UCB model, CDS is extracted if it is defined as a parameter or variable. For both models, YGM_MAG and YGM_PHASE are extracted if they are defined as variables. If S-parameter data from the parasitic_r_l Setup is supplied as an input, this data is converted to Z- parameters and subtracted before calculating the intrinsic values for Zds. Depending on the device, optimization may be required to tune the parameter values.
Optionally - CGS, CGD, TAU, CGDN, RGDN, RDS, YGM_MAG, YGM_PHASE UCB: CGS, CGD
GAASCV_cgs_cgdStandard extraction for the UCB GaAs model. Extracts junction capacitances from S-parameter data measured with VGS and VDS held constant. Requires the following Setup: Optimization can be used to tune the parameter values, but should not typically be required. GAASDC_cur1Standard extraction for the Curtice GaAs model. Extracts the threshold parameters from DC measurements. Requires the following Setup: Depending on the device, optimization may be required to tune the parameter values. The optimization should not include too much of the pinch-off region. GAASDC_cur2Standard extraction for the Curtice GaAs model. Extracts the linear and saturation parameters from DC measurements. Requires the following Setup: Optimization is typically required to tune the parameter values. GAASDC_lev1Standard extraction for the UCB and Curtice GaAs models. Extracts diode (and optionally resistance) parameters from DC measurements. Requires the following Setups:
The Vg limits for the diode parameter extraction are automatically selected. If the OVERRIDE_LIMITS variable is TRUE, these limits can be specified manually with the X_LOW and X_HIGH variables, which can be set from the Plot menu. Omit the resistance extraction (useful if resistances were extracted using GAASAC_l_and_r) by specifying only the first Setup of the 3 listed above. Optimization can be used to tune the parameter values, but should not typically be required.
VG (S Flt), IG (S Flt), VG (low Vds), VD (low Vds), ID (low Vds), VG (D Flt), IG (D Flt)
GAASDC_lev2Standard extraction for the UCB GaAs model. Extracts the drain current parameters from DC measurements. Requires the following setups: Depending on the device, the following parameters may require optimization: VTO, BETA, ALPHA, LAMBDA over Id versus Vd. VTO, BETA, B over Id versus Vg.
IdVg VG, IdVg VD, IdVg ID, IdVg IG, IdVd VD, IdVd VG, IdVd ID, IdVd IG
GAASDC_rdDC RD extraction for the UCB and Curtice GaAs models. Requires the following setup: This extraction can be used to extract RD when AC measurements are not available, or to verify the value extracted from the GAASAC_l_and_r function. GAASDC_rsDC RS extraction for the UCB and Curtice GaAs models. Requires the following setup: This extraction can be used to extract RS when AC measurements are not available, or to verify the value extracted from the GAASAC_l_and_r function. GAASmod_cgdGiven the drain, gate, and source voltages, calculates gate-drain capacitance according to the UCB GaAs model. GAASmod_cgsGiven the drain, gate, and source voltages, calculates gate-source capacitance according to the UCB GaAs model. GAASmod_idGiven the drain, gate, and source voltages, calculates drain current according to the UCB GaAs model. GAASmod_igGiven the drain, gate, and source voltages, calculates gate current according to the UCB GaAs model. H11corrProduces an input impedance curve corrected for the effects of base to collector feedthrough impedance. The corrected output is used as input to the RBBcalc function described below. HFBJT_linear_elem_extrNo documentation available at this time. HFBJT_linear_ssmod_simNo documentation available at this time. HFMOD_get_bias_sizeFinds the number of bias points in a data set. For sweeps that don't include a frequency sweep, this is the same as the total number of points in the dataset. HFMOD_get_freq_indexFinds the array index of the frequency point nearest to (>=) the specified frequency value. HFMOD_get_freq_valueFinds a specific frequency value, given an index value. HFMOD_remove_freq_dblReduces a matrix of bias and frequency dependent data (type double) down to a bias dependent matrix only.
HFMOD_remove_freq_dbl(<Input double>, <Dataset name>, <Setup path>)
Dummy input matrix (must be dimensioned to desired size of output matrix)
HFMOD_remove_freq_matReduces a complex matrix of bias and frequency dependent 2-port parameters down to a bias dependent matrix only.
HFMOS3_capasExtracts the overlap capacitances CGSO and CGDO and the oxide thickness TOX from the capacitance data. HFMOS3_lin_largeStandard extraction for the HF MOS Level 3 model. Extracts classical Level 3 parameters, using Id versus Vg data from a large device. HFMOS3_lin_narrowStandard extraction for the HF MOS Level 3 model. Extracts Level 3 width parameters, using Id versus Vg data from a narrow device. HFMOS3_lin_shortStandard extraction for the HF MOS Level 3 model. Extracts Level 3 length effect parameters, using Id versus Vg data from a short device. HFMOS3_modcapCalculates the Gate-Source and Gate-Drain capacitances according to the Meyer model or Bulk-Drain junction capacitance according to the UCB MOS model. HFMOS3_parasExtracts gate, drain and source parasitic resistances and inductances from the impedance data. HFMOS3_sat_shortStandard extraction for the HF MOS Level 3 model. Extracts Level 3 saturation parameters, using Id versus Vd data from a short device. HFMOS3_StoCThis function calculates capacitance data from S-parameter data, allowing gate-source , gate-drain, and junction capacitances to be calculated from network analyzer measurements. The output of this function can be used in place of actual capacitance data to extract capacitance related parameters. HFMOS3_StoZThis function calculates impedance data from S-parameter data, allowing gate, drain, and source impedances to be calculated from network analyzer measurements. The output of this function can be used in place of actual impedance data to extract the parasitics parameters. HFMOS3_sub_largeStandard extraction for the HF MOS Level 3 model. Extracts Level 3 subthreshold parameters, using Id versus Vg data from a large device. Initializes ETA for later optimization. HFMOS3_total_capExtracts the total PN junction capacitance parameters from the bottom and sidewall. Requires C-V measurement on 2 different geometries. The first measurement should be on a device in which the bottom capacitance dominates. The second measurement should be on a device in which the sidewall capacitance dominates. HiSIM2_DC_vthThe function picks up one single sweep curve of id=f(vg) of a specified setup and extracts the threshold voltage vth. The setup is specified by the parameters path to vd, ... etc. This makes it easier to call the function with variable inputs inside the PEL programs. The Flag variable is used to define certain conditions, for example, the extraction of vth for the large, which does not need to calculate all the early voltage values.
HiSIM_HV_DC_vth"The function picks up one single sweep curve of id=f(vg) of a specified setup and extracts the threshold voltage vth. The setup is specified by the parameters path to vd, ... etc. This makes it easier to call the function with variable inputs inside the PEL programs. The Flag variable is used to define certain conditions, e.g., the extraction of vth for the large, which does not need to calculate all the early voltage values.
HP5250_bias_cardHP 5250A Switching Matrix function. Bias-enables all the output ports for the specified card.
HP5250_bias_channelHP 5250A Switching Matrix function. Bias-enables the specified output ports in the channel list. Note that the input ports are ignored since the input port is always the Bias Input Port.
HP5250_bias_initHP 5250A Switching Matrix function. Selects the bias port. When using the HP E5255A card, the Input Bias Port is the dedicated bias port; however, for the HP E5252A the Input Bias Port must be selected using this function.
HP5250_bias_setmodeHP 5250A Switching Matrix function. Enables the bias mode for the specified card once Input Bias Port and Enabled Output ports have been specified.
When Bias Mode is ON, the Input Bias Port is connected to all the Bias Enabled output ports that are not connected to any other input ports. Bias Disabled output ports are never connected to an Input Bias Port when Bias Mode is ON.
When Bias Mode is OFF, the Input Bias Port is the same as the other ports. HP5250_card_configHP 5250A Switching Matrix function. Changes the default configuration for the specified card. When the connection rule is FREE (default mode), each input port can be connected to multiple output ports and each output port can be connected to multiple input ports. When the connection is SINGLE, each input port can be connected to only 1 output. Connection sequence specifies the open/close sequence of the relays when changing from an existing connection to a new connection.
HP5250_compensate_capHP 5250A Switching Matrix function. Equivalent to IC-CAP C routine for the HP BASIC capacitance compensation routine called Ccompen_5250 supplied with the HP 5250A. It returns a 2 by 1 matrix (2 rows, 1 column) defined as follows:
HP5250_connectHP 5250A Switching Matrix function. Connects or disconnects specified channels. Note that Bias Mode and/or coupling Mode are also taken into account when a channel is closed or opened.
HP5250_couple_enableHP 5250A Switching Matrix function. Enables couple port mode. Couple port allows synchronized connection of 2 adjacent input ports to 2 adjacent output ports.
HP5250_couple_setupHP 5250A Switching Matrix function. Sets up couple ports for making kelvin connections.
HP5250_debugHP 5250A Switching Matrix function. Used only for debugging. When the debug flag is set to 1, all the functions print out all the command strings that are sent to the instruments. Set flag using the values 1 or 0, or use YES or NO. HP5250_disconnect_cardHP 5250A Switching Matrix function. Opens all relays or channels in the specified cards. |
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