Manuals >Nonlinear Device Models Volume 1 >Bipolar Transistor Characterization Print version of this Book (PDF file) |
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Test InstrumentsThe HP 4141, HP/Agilent 4142, or HP 4145 can be used to derive DC model parameters from measured DC voltage and current characteristics. The HP 4271, HP 4275, HP 4280, HP/Agilent 4284, or HP 4194 can be used to derive capacitance model parameters from measured capacitance characteristics at the device junctions. Instrument-to-Device ConnectionsWhen the device is installed in a test fixture, verify the correct connection of device nodes by checking the inputs and outputs for the appropriate DUTs. The following table is a cross-reference of the connections between the terminals of a typical bipolar transistor and various measurement units. These connections and measurement units are defined in the model file.
Input and output tables in the various setups use abbreviations C (collector), B (base), E (emitter), and S (substrate) for the bipolar transistor nodes. These nodes are defined in the Circuit folder. Measurement units (abbreviated as follows) are defined in Hardware Setup. |
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